KI1400DL

SMD S MD Type N-Channel 20-V (D-S) MOSFET KI1400DL SOT-363 1.3 +0.1 -0.1 Transistors IC Unit: mm 0.65 0.525 Features +0.15 2.3-0.15 0.36 Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 )* TA=25 -TA=85 Pulsed drain current Continuous source current (diode conduction) * Power dissipation * -TA=25 TA=85 Symbol VDS VGS ID IDM IS PD Tj,Tstg 0.8 0.625 0.400 1.7 1.2 5 O.8 0.568 0.295 -55 to +150 5 secs 20 12 1.6 1.0 Steady State Unit V V A A A W Operating junction and storage temperature range * Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) t 5 sec Symbol RthJA RthJF Typical 165 180 105 Maximum 200 220 130 /W Unit Steady State Steady State * Surface Mounted on 1" X 1" FR4 Board. +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.1 1.25-0.1 www.kexin.com.cn 1 SMD Type KI1400DL Electrical Characteristics Ta = 25 Parameter Gate threshold voltage Gate-body leakage Zero gate voltage drain current On-state drain current Drain-source on-state resistance Forward transconductance Diode forward voltage Total gate charge * Gate-source charge * Gate-drain charge * Turn-on time Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr Turn-off time Source-Drain Reverse Recovery Time * Pulse test: PW 300 ìs duty cycle 2%. td(off) tf trr IF = 0.8 A, di/dt = 100 A/ s VDD = 10V , RL = 20 , ID =1A , VGEN =4.5V , RG = 6 VDS =10V ,VGS = 4.5 V , ID= 1.7A Testconditons VDS = VGS, ID = -250 A VDS = 0 V, VGS = 12 V Transistors IC Min 0.6 Typ Max Unit V 100 1 5 2 0.123 0.150 0.195 0.235 5 0.78 2.1 0.3 0.4 10 30 14 8 30 17 50 25 15 50 1.1 4.0 nA A A VDS = 16 V, VGS = 0 V VDS =16 V, VGS = 0 V, TJ = 85 VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1.7 A VGS = 2.5V, ID =1.3A VDS = 10 V, ID = 1.7 A IS = 0.8 A, VGS = 0 V S V nC ns Marking Marking ND 2 www.kexin.com.cn