SMD S MD Type
P-Channel 1.8-V (G-S) MOSFET KI1407DL
SOT-363
1.3
+0.1 -0.1
Transistors IC
Unit: mm
Features
TrenchFET Power MOSFETs 1.8 V Rated
0.65
0.525
0.36
Absolute Maximum Ratings Ta = 25
Parameter Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 )* TA=25 -TA=85 Pulsed drain current Continuous source current (diode conduction) * Power dissipation * -TA=25 TA=85 Symbol VDS VGS ID IDM IS PD Tj,Tstg -0.8 0.625 0.400 - 1.8 - 1.4 -5 -0.8 0.568 0.295 -55 to +150 5 secs -12 8 - 1.6 - 1.2 Steady State Unit V V A A A W
Operating junction and storage temperature range * Surface Mounted on 1" X 1" FR4 Board.
Thermal Resistance Ratings Ta = 25
Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) t 5 sec Symbol RthJA RthJF Typical 165 180 105 Maximum 200 220 130 /W Unit
Steady State Steady State
* Surface Mounted on 1" X 1" FR4 Board.
+0.05 0.95-0.05
0.1max
+0.1 0.3-0.1 +0.1 2.1-0.1
+0.05 0.1-0.02
+0.1 1.25-0.1
+0.15 2.3-0.15
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1
SMD Type
KI1407DL
Electrical Characteristics Ta = 25
Parameter Gate threshold voltage Gate-body leakage Zero gate voltage drain current On-state drain current Symbol VGS(th) IGSS IDSS ID(on) Testconditons VDS = VGS, ID = -250 A VDS = 0 V, VGS = 8V
Transistors IC
Min -0.45
Typ
Max -1 100 -1 -5
Unit V nA A A
VDS = -12 V, VGS = 0 V VDS =-20 V, VGS = 0 V, TJ = 85 VDS =-5 V, VGS = -4.5 V VGS = -4.5 V, ID = -1.8 A -2
0.105 0.130 0.140 0.170 0.185 0.225 4.3 -0.77 5.5 -1.1 7.0 nC S V
Drain-source on-state resistance
rDS(on)
VGS = -2.5V, ID =-1.5 A VGS = -1.8V, ID = -0.8A
Forward transconductance Diode forward voltage Total gate charge * Gate-source charge * Gate-drain charge * Turn-on time
gfs VSD Qg Qgs Qgd td(on) tr
VDS = -10 V, ID = -1.8 A IS = -0.8 A, VGS = 0 V
VDS =-6V ,VGS = -4.5 V , ID= -1.8A
0.95 1.10 8 12 50 50 45 40
Turn-off time Source-Drain Reverse Recovery Time * Pulse test: PW 300 ìs duty cycle 2%.
td(off) tf trr
VDD = -6V , RL = 10 , ID =-1A , VGEN =-4.5V , RG = 6
33 32 29
ns
IF = -0.8 A, di/dt = 100 A/
s
20
Marking
Marking OC
2
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