KI1501DL

SMD S MD Type Transistors IC Complementary 20-V (D-S) Low-Threshold MOSFET KI1501DL SOT-363 +0.1 1.3-0.1 0.65 Unit: mm PIN Configuration +0.15 2.3-0.15 0.525 0.36 Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient* *Surface Mounted on FR4 Board, t 10 sec. TJ, Tstg RthJA IDM PD Symbol VDS VGS ID N-Channel 20 8 250 200 500 0.2 0.13 -55 to 150 625 /W P-Channel -20 8 -180 -140 -500 Unit V V mA mA mA W W +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.1 1.25-0.1 www.kexin.com.cn 1 SMD Type KI1501DL Electrical Characteristics TJ = 25 Parameter Drain Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Symbol V(BR)DSS VGS( th) IGSS Testconditons VGS = 0 V, ID = 10 A VGS = 0 V, ID =-10 A VDS = VGS, ID = 50 A VDS = VGS, ID = -50 VDS = 0 V VGS = 8V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 VDS = -20 V, VGS = 0 V, TJ = 55 VDS On State Drain Currenta ID(on) VDS VDS VDS 2.5 V, VGS = 5.0 V -2.5 V, VGS = -5.0 V 4.5 V, VGS = 8.0 V -4.5 V, VGS = -8.0 V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel VDS = 5 V, VGS = 0 V P-Channel VDS = -5 V, VGS =0 V *2 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N Channel VDD = 3 V, RL = 100 ID= 0.25 A, VGEN = 4.5 V, Rg = 10 P-Channel VDD = -3 V, RL = 100 ID= -0.25 A, VGEN = -4.5 V, Rg = 10 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 120 -120 400 -400 Min 20 -20 0.4 -0.4 Transistors IC Typ 24 -24 0.9 -0.9 2 2 0.001 Max Unit 1.5 -1.5 100 100 100 1 -1 V nA -0.001 -100 A mA VGS = 2.5 V, ID = 150 mA Drain Source On State Resistance*1 rDS(on) VGS = -2.5 V, ID = -75 mA VGS = 4.5 V, ID = 250 mA VGS = -4.5 V, ID = -180 mA Forward Transconductance*1 Diode Forward Voltage*1 Total Gate Charge Gate Source Charge Gate Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn On Time Rise Time Turn Off Delay Time Fall Time gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td( off) tf VDS = 2.5 V, ID = 50 mA VDS = -2.5 V, ID = - 50 mA IS = 50 mA, VGS = 0 V IS = -50 mA, VGS = 0 V N-Channel VDS = 5 V, VGS = 4.5 V, ID = 100 mA P-Channel VDS = -5 V, VGS = -4.5 V, ID = -mA *2 1.6 4 1.2 2.6 150 200 0.7 -0.7 300 300 25 25 100 100 15 15 11 11 5 5 7 7 25 25 19 19 9 9 2.5 5 2.0 3.8 mS 1.2 -1.2 450 450 pC V pF 12 12 35 35 30 30 15 15 ns *1 Guaranteed by design, not subject to production testing. *2 Pulse test; pulse width 300 s, duty cycle 2%. 2 www.kexin.com.cn