KI1555DL

SMD S MD Type Transistors IC Complementary Low-Threshold MOSFET Pair KI1555DL SOT-363 +0.1 1.3-0.1 0.65 Unit: mm 0.525 PIN Configuration +0.15 2.3-0.15 0.36 Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 85 Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation* TA = 25 TA = 85 Operating Junction and Storage Temperature Range *Surface Mounted on 1" X 1" FR4 Board. TJ, Tstg IDM IS PD 0.25 0.3 0.16 0.23 0.27 0.14 Symbol VDS VGS ID 0.70 0.50 N-Channel 5 secs Steady State 20 12 0.66 0.48 1 -0.25 0.3 0.16 -55 to 150 -0.23 0.27 0.14 0.60 0.43 P-Channel 5 secs Steady State -8 8 0.57 0.41 V V A A A A W W Unit Thermal Resistance Ratings TA = 25 Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) t 5 sec Symbol RthJA RthJF Typical 360 400 300 Maximum 415 460 350 /W Unit Steady State Steady State *Surface Mounted on 1" X 1" FR4 Board. +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.1 1.25-0.1 www.kexin.com.cn 1 SMD Type KI1555DL Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 12V VDS = 0 V VGS = 8V VDS = 16V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -6.4V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85 VDS = -6.4V, VGS = 0 V, TJ = 85 On State Drain Currenta ID(on) VDS VDS 5 V, VGS = 4.5 V -5 V, VGS = -4.5 V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS = -4 V, VGS = -4.5 V, ID = -0.57A N- Channel VDD = 10 V, RL = 20 ID= 0.5 A, VGEN = 4.5V, Rg = 6 P-Channel VDD = -4 V, RL = 8 ID= -0.5 A, VGEN = -4.5 V, Rg = 6 IF = 0.23 A, di/dt = 100 A/ IF = -0.23 A, di/dt = 100 A/ s s P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 1.0 -1.0 Min 0.6 Transistors IC Typ Max Unit V -0.45 100 100 1 -1 5 -5 nA A A VGS = 4.5 V, ID = 0.66A VGS = -4.5 V, ID = -0.57A Drain Source On State Resistance* rDS(on) VGS = 2.5 V, ID = 0.40A VGS = -2.5 V, ID = -0.48A VGS = -1.8 V, ID = -0.20A Forward Transconductance* Diode Forward Voltage* Total Gate Charge Gate Source Charge Gate Drain Charge Turn On Time Rise Time Turn Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width gfs VSD Qg Qgs Qgd td(on) tr td( off) tf trr VDS = 10 V, ID = 0.66A VDS = -4 V, ID = -0.57A IS = 0.23A, VGS = 0 V IS = -0.23A, VGS = 0 V N-Channel VDS = 10 V, VGS = 4.5V, ID = 0.66A 0.320 0.385 0.510 0.600 0.560 0.630 0.720 0.850 1.00 1.5 1.2 0.8 -0.8 0.8 1.5 0.06 0.17 0.30 0.16 10 6 16 25 10 10 10 10 20 20 20 12 30 50 20 20 20 20 40 40 ns 1.2 -1.2 1.2 2.3 pC 1.200 mS V 300 s, duty cycle 2%. 2 www.kexin.com.cn