KI1557DH

SMD S MD Type Transistors IC N- and P-Channel 1.8-V (G-S) MOSFET KI1557DH SOT-363 Unit: mm Features TrenchFET Power MOSFETs Fast Switching to Minimize Gate and Switching Losses +0.1 1.3-0.1 0.65 0.525 0.36 Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 85 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 85 Operating Junction and Storage Temperature Range *Surface Mounted on 1" X 1" FR4 Board. TJ, Tstg IDM IS PD 0.5 0.6 0.3 Symbol VDS VGS ID 1.3 0.9 3 0.39 0.47 0.25 -0.5 0.6 0.3 1.2 0.8 N-Channel 5 secs Steady State 12 8 -0.86 -0.62 -2 -0.39 0.47 0.25 -0.77 -0.55 P-Channel 5 secs Steady State -12 V V A A A A W W Unit -55 to 150 Thermal Resistance Ratings TA = 25 Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) *Surface Mounted on 1" X 1" FR4 Board. t 5 sec Symbol RthJA RthJF Typical 170 220 105 Maximum 210 265 125 /W Unit Steady State Steady State +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.1 1.25-0.1 +0.15 2.3-0.15 www.kexin.com.cn 1 SMD Type KI1557DH Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 100 A VDS = VGS, ID = -100 VDS = 0 V VGS = 8V VDS = 9.6V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -9.6V, VGS = 0 V VDS = 9.6 V, VGS = 0 V, TJ = 85 VDS = -9.6V, VGS = 0 V, TJ = 85 On State Drain Current* ID(on) VDS VDS 5 V, VGS = 4.5 V -5 V, VGS = -4.5 V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS = -6 V, VGS = -4.5 V, ID = -0.1A N Channel VDD = 6 V, RL = 12 ID= 0.5 A, VGEN = 4.5V, Rg = 6 P-Channel VDD = -6 V, RL = 12 ID= -0.5 A, VGEN = -4.5 V, Rg = 6 IF = 0.39 A, di/dt = 100 A/ IF = -0.39 A, di/dt = 100 A/ s s P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 3 2 Min 0.45 -0.45 Transistors IC Typ Max 1 1 100 100 1 -1 5 -5 Unit V nA A A VGS = 4.5 V, ID = 1.2A VGS = -4.5 V, ID = -0.77A Drain Source On State Resistance* rDS(on) VGS = 2.5 V, ID = 1.0A VGS = -2.5 V, ID = -0.6A VGS = 1.8 V, ID = 0.2A VGS = -1.8 V, ID = -0.20A Forward Transconductance* Diode Forward Voltage* Total Gate Charge Gate Source Charge Gate Drain Charge Turn On Time Rise Time Turn Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width gfs VSD Qg Qgs Qgd td(on) tr td( off) tf trr VDS = 5 V, ID = 1.2A VDS = -5 V, ID = -0.77A IS = 0.39A, VGS = 0 V IS = -0.93A, VGS = 0 V N-Channel VDS = 6 V, VGS = 4.5V, ID = 1.2A 0.195 0.235 0.445 0.535 0.230 0.280 0.735 0.880 0.284 0.340 1.05 0.8 1.2 0.8 -0.8 0.8 1.1 0.15 0.3 0.20 0.25 15 17 25 30 25 15 10 10 20 25 25 25 40 45 40 25 15 15 40 40 ns 1.2 -1.2 1.2 1.8 pC 1.26 mS V 300 s, duty cycle 2%. 2 www.kexin.com.cn