KI1563DH

SMD S MD Type Transistors IC Complementary 20-V (D-S) Low-Threshold MOSFET KI1563DH SOT-363 1.3 +0.1 -0.1 Unit: mm 0.65 0.525 Features Fast Switching +0.15 2.3-0.15 0.36 Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 85 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 85 Operating Junction and Storage Temperature Range *Surface Mounted on 1" X 1" FR4 Board. TJ, Tstg IDM IS PD 0.61 0.74 0.38 Symbol VDS VGS ID 1.28 0.92 4 0.48 0.57 0.3 -0.61 0.3 0.16 -55 to 150 1.13 0.81 N-Channel 5 secs Steady State 20 8 -1 -0.72 -3 -0.48 0.57 0.3 -0.88 -0.63 P-Channel 5 secs Steady State -20 V V A A A A W W Unit Thermal Resistance Ratings TA = 25 Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) *Surface Mounted on 1" X1" FR4 Board. t 5 sec Symbol RthJA RthJF Typical 130 170 80 Maximum 170 220 100 /W Unit Steady State Steady State +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.1 1.25-0.1 TrenchFET Power MOSFETs www.kexin.com.cn 1 SMD Type KI1563DH Electrical Characteristics TJ= 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 100 A VDS = VGS, ID = -100 VDS = 0 V VGS = 8V VDS = 16V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -16V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85 VDS = -16V, VGS = 0 V, TJ = 85 On State Drain Current* ID(on) VDS VDS 5 V, VGS = 4.5 V -5 V, VGS = -4.5 V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS = -10 V, VGS = -4.5 V, ID = -0.88A N Channel VDD = 10 V, RL = 20 ID= 0.5 A, VGEN = 4.5V, Rg = 6 P-Channel VDD = -10 V, RL = 20 ID= -0.5 A, VGEN = -4.5 V, Rg = 6 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IF = 0.48 A, di/dt = 100 A/ s N-Ch P-Ch 2 -2 Min 0.45 -0.45 Transistors IC Typ Max 1 1 100 100 1 -1 5 -5 Unit V nA A A VGS = 4.5 V, ID = 1.13A VGS = -4.5 V, ID = -0.88A Drain Source On State Resistance* rDS(on) VGS = 2.5 V, ID = 0.99A VGS = -2.5 V, ID = -0.71A VGS = 1.8 V, ID = 0.2A VGS = -1.8 V, ID = -0.20A Forward Transconductance* Diode Forward Voltage* Total Gate Charge Gate Source Charge Gate Drain Charge Turn On Time Rise Time Turn Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width gfs VSD Qg Qgs Qgd td(on) tr td( off) tf trr VDS = 10 V, ID = 1.13A VDS = -10 V, ID = -0.88A IS = 0.48A, VGS = 0 V IS = -0.48A, VGS = 0 V N-Channel VDS = 10 V, VGS = 4.5V, ID = 1.13A 0.220 0.280 0.400 0.490 0.281 0.360 0.610 0.750 0.344 0.450 0.850 2.6 1.5 0.8 -0.8 1.25 1.2 0.21 0.3 0.3 0.21 15 18 22 25 25 15 12 12 30 30 25 30 35 40 40 25 20 20 60 60 ns 1.2 -1.2 2 1.8 pC 1.10 mS V 300 s, duty cycle 2%. 2 www.kexin.com.cn