KI1902DL

SMD S MD Type Dual N-Channel 20-V (D-S) MOSFET KI1902DL SOT-363 1.3 +0.1 -0.1 Transistors IC Unit: mm Features 0.65 0.525 0.36 Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 )* TA=25 -TA=85 Pulsed drain current Continuous source current (diode conduction) * Power dissipation * -TA=25 TA=85 Symbol VDS VGS ID IDM IS PD Tj,Tstg 0.25 0.30 0.16 -55 to +150 0.70 0.50 1.0 0.23 0.27 0.14 5 secs 20 12 0.66 0.48 Steady State Unit V V A A A W Operating junction and storage temperature range * Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) t 5 sec Symbol RthJA RthJF Typical 360 400 300 Maximum 415 460 350 /W Unit Steady State Steady State * Surface Mounted on 1" X 1" FR4 Board. +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.1 1.25-0.1 +0.15 2.3-0.15 www.kexin.com.cn 1 SMD Type KI1902DL Electrical Characteristics Ta = 25 Parameter Gate threshold voltage Gate-body leakage Zero gate voltage drain current On-state drain current Drain-source on-state resistance Forward transconductance Diode forward voltage Total gate charge * Gate-source charge * Gate-drain charge * Turn-on time Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr Turn-off time Source-Drain Reverse Recovery Time * Pulse test: PW 300 ìs duty cycle 2%. td(off) tf trr IF = 0.23 A, di/dt = 100 A/ s VDD = 10V , RL = 20 , ID =0.5A , VGEN =4.5V , RG = 6 VDS =10V ,VGS = 4.5 V , ID= 0.66A Testconditons VDS = VGS, ID = 250 A VDS = 0 V, VGS = 12 V Transistors IC Min 0.6 Typ Max 15 100 1 5 Unit V nA A A VDS = 16 V, VGS = 0 V VDS =16 V, VGS = 0 V, TJ = 85 VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 0.66 A VGS = 2.5V, ID =0.40A VDS = 10 V, ID = 0.66 A IS = 0.23 A, VGS = 0 V 1.0 0.320 0.385 0.560 0.630 1.5 0.8 0.8 0.06 0.30 10 16 10 10 20 20 30 20 20 40 ns 1.2 1.2 nC S V Marking Marking PA 2 www.kexin.com.cn