KI2302DS

S MD Type N-Channel 1.25-W, 2.5-V MOSFET KI2302DS SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Features Unit: mm +0.1 2.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 ) *2 TA=70 Pulsed Drain Current *1 Continuous Source Current (Diode Conduction)*2 Power Dissipation *2 TA=70 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc *1 Pulse width limited by maximum junction temperature. *2 Surface Mounted on FR4 Board, t *3 Surface Mounted on FR4 Board. 5 sec. TJ, Tstg RthJA IDM IS PD Symbol VDS VGS ID Rating 20 8 2.8 2.2 10 1.6 1.25 0.80 -55 to 150 100 166 /W W A Unit V www.kexin.com.cn 1 SMD Type KI2302DS Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Symbol V(BR)DSS VGS(th) IGSS IDSS Testconditons VGS = 0 V, ID = 10 ìA VDS = VGS, ID = 50 ìA VDS = 0 V, VGS = 8V Transistors Diodes Min 20 0.65 Typ Max Unit V 100 1 10 6 4 0.07 0.085 nA ìA VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 On-State Drain Current * ID(on) VDS VDS 5 V, VGS = 4.5 V 5 V, VGS = 2.5 V A Drain-Source On-Resistance * Forward Transconductance * Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time *Pulse test: PW 300 ìs duty cycle 2%.. rDS(on) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VGS = 4.5 V, ID = 3.6 A VGS = 2.5 V, ID = 3.1 A VDS = 5 V, ID = 3.6 A IS = 1.6 A, VGS = 0 V Ù S 0.085 0.115 10 0.76 5.4 1.2 10 nC V VDS=10V,VGS=4.5V,ID=3.6A 0.65 1.60 340 VDS=10V,VGS=0V,f=1MHz 115 33 12 25 60 60 25 pF VDD=10V,RL=5.5 Ù,ID=3.6A,VGEN=4.5V,RG=6Ù 36 34 10 ns Marking Marking A2 2 www.kexin.com.cn