KI2309DS

S MD Type P-Channel 60-V (D-S) MOSFET KI2309DS SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 ) *1,2 TA=25 -TA=100 Pulsed drain current Avalanche Current Maximum Power dissipation *1,2 -Operating junction and storage temperature range *1 Surface Mounted on FR4 Board. *2 t 5 sec L = 0.1 mH TA=25 TA=70 Symbol VDS VGS ID IDM IAS PD Tj,Tstg Rating -60 20 -1.25 -0.85 -8 -5 1.25 0.8 -55 to +150 Unit V V A A A W Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction to Ambient* t 5 sec Symbol RthJA 130 RthJL 45 Typical Maximum 100 166 60 /W Unit Steady State Maximum Junction-to-Lead* * Surface Mounted on FR4 Board. Steady State www.kexin.com.cn 1 SMD Type KI2309DS Electrical Characteristics Ta = 25 Parameter Drain-source breakdown voltage Gate threshold voltage Gate-body leakage Zero gate voltage drain current On-state drain current Drain-source on-state resistance Forward transconductance Total gate charge * Gate-source charge * Gate-drain charge * Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Current Pulsed Current Diode Forward Voltage* Source-Drain Reverse Recovery Time * Pulse test: PW 300 s duty cycle 2%. Symbol Testconditons A Transistors Min -60 -1 Typ Max Unit V V(BR)DSS VGS = 0 V, ID = -250 VGS(th) IGSS IDSS ID(on) rDS(on) gfs Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr IS = -1.25 A, VGS = 0 V VDS = VGS, ID = -250 A VDS = 0 V, VGS = 20 V 100 -1 -50 -6 0.275 0.340 0.406 0.550 1.9 5.4 12 nA A A VDS = -48V, VGS = 0 V VDS =-48V, VGS = 0 V, TJ = 125 VDS - 4.5 V, VGS = -10 V VGS = -10 V, ID = -1.25 A VGS =4.5 V, ID =-1 A VDS =-4.5 V, ID = -1 A S VDS = -30V ,VGS = -10 V , ID= -1.25 A 1.15 0.92 10.5 20 20 30 15 -1.25 -8 -0.82 -1.2 55 nC VDD = -30V , RL = 30 , ID =- 1A , VGEN =-4.5V , RG = 6 11.5 15.5 7.5 ns A A V ns IF = -1.25 A, di/dt = 100 A/ s 30 Marking Marking A9 2 www.kexin.com.cn