KI2314EDS

S MD Type N-Channel 20-V (D-S) MOSFET KI2314EDS SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 TrenchFET Power MOSFET ESD Protected: 3000 V +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )*1 TA = 25 TA = 70 Pulsed Drain Current Avalanche Current*2 Single Avalanche Energy L = 0.1 mH L = 0.1 mH IDM IAS EAS IS PD TJ, Tstg 1.25 0.8 -55 to 150 Symbol VDS VGS ID 4.9 3.9 15 15 11.25 1 0.75 0.48 W 5secs 20 12 3.77 3 A Steady State Unit V Continuous Source Current (Diode Conduction)*1 Power Dissipation *1 TA = 25 TA = 70 Operating Junction and Storage Temperature Range *1 Surface Mounted on 1"X 1" FR4 Board. *2 Pulse width limited by maximum junction temperature. Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient * Maximum Junction-to-Foot (Drain) * Surface Mounted on 1"X 1" FR4 Board. t 5 sec Symbol RthJA RthJF Typical 75 120 40 Maximum 100 166 50 /W Unit Steady-State Steady-State www.kexin.com.cn 1 SMD Type KI2314EDS Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) Testconditons VGS = 0 V, ID = 250 VDS = VGS, ID =250 VDS = 0 V, VGS = A A 4.5 V Min 20 0.45 Transistors Typ Max Unit V V 1.5 1 A A VDS =16V, VGS = 0 V VDS = 16V, VGS = 0 V, TJ = 70 VDS 10 V, VGS = 4.5 V 15 0.027 0.033 0.042 40 0.8 11.0 VDS = 10 V, VGS = 4.5V, ID = 5.0 A 1.5 2.1 0.53 VDD=10V,RL=10 ,ID=1.0A,VGEN=4.5V,RG=6 1.4 * 13.5 5.9 IF = 1.0 A, di/dt = 100 A/ s 13 75 A 0.033 0.040 0.051 S 1.2 14.0 nC V VGS = 4.5 V, ID =5.0A Drain Source On State Resistance* rDS(on) VGS = 2.5V, ID = 4.5A VGS = 1.8V, ID =4.0A Forward Transconductanceb Schottky Diode Forward Voltage* Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test :Pulse width gfs VSD Qg Qgs Qgd td(on) tr td(off) tf trr VDS = 15V, ID = 5.0 A IS = 1.0 A, VGS = 0 V 0.8 2.2 20 9 25 ns ns 300 s,duty cycle 2% Marking Marking C4 2 www.kexin.com.cn