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KI2315BDS

KI2315BDS

  • 厂商:

    KEXIN(科信)

  • 封装:

  • 描述:

    KI2315BDS - P-Channel 1.8-V (G-S) MOSFET - Guangdong Kexin Industrial Co.,Ltd

  • 数据手册
  • 价格&库存
KI2315BDS 数据手册
SMD S MD Type P-Channel 1.8-V (G-S) MOSFET KI2315BDS Transistors IC SOT-23 Unit: mm Features +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150 ) * TA=25 ------------------------------------------------TA=70 Pulsed Drain Current * Continuous Source Current (diode conduction) *2 Power Dissipation * TA=25 -------------------------------------------------TA=70 Jumction Temperature Storage Temperature * Surface Mounted on FR4 Board. Symbol VDS VGS ID IDM IS PD Tj Tstg -1.0 1.19 0.76 150 -55 to +150 -3.85 -3.0 -12 -0.62 0.75 0.48 5 sec Steady State -12 8 -3.0 -2.45 Unit V V A A A W Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient *1 Maximum Junction-to-Ambient *2 Maximum Junction-to-Foot (Drain) Steady State Steady State 5 sec. RthJF Symbol RthJA Typical 85 130 60 Maximum 105 166 75 /W Unit * 1. Surface Mounted on FR4 Board, t * 2. Surface Mounted on FR4 Board. www.kexin.com.cn 1 SMD Type KI2315BDS Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Symbol Testconditons A Transistors IC Min -12 -0.45 Typ Max Unit V V(BR)DSS VGS = 0 V, ID = -10 VGS(th) IGSS IDSS VDS = VGS, ID = -250 ìA VDS = 0 V, VGS = 8V -0.9 100 -1 -10 nA A VDS = -12 V, VGS = 0 V VDS = -12 V, VGS = 0 V, TJ = 55 On-State Drain Current ID(on) VDS VDS -5 V, VGS = -4.5 V -5 V, VGS = -2.5 V -6 -3 0.040 0.050 0.05 0.065 A VGS = -4.5 V, ID = -3.85 A Drain-Source On-State Resistance * rDS(on) VGS = -2.5 V, ID = -3.4 A VGS = -1.8V, ID = -2.7 A Forward Transconductance * Diode Forward Voltage * Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr Turn-Off Time * Pulse test: PW 300 ìs duty cycle 2%. td(off) tf VDD = -6V , RL = 6Ù , ID = -1A , VGEN =- 4.5V , RG = 6Ù VDS = -6V ,VGS = 0 , f = 1 MHz VDS = -6V ,VGS = -4.5 V , ID= -3.85 A VDS = -5 V, ID = -3.85 A IS = -1.6 A, VGS = 0 V 0.071 0.100 7 -1.2 8 1.1 2.3 715 275 200 15 35 50 50 20 50 70 75 ns pF 15 nC S V Marking Marking M5 2 www.kexin.com.cn
KI2315BDS 价格&库存

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