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KI2319DS

KI2319DS

  • 厂商:

    KEXIN(科信)

  • 封装:

  • 描述:

    KI2319DS - P-Channel 40-V (D-S) MOSFET - Guangdong Kexin Industrial Co.,Ltd

  • 数据手册
  • 价格&库存
KI2319DS 数据手册
SMD S MD Type P-Channel 40-V (D-S) MOSFET KI2319DS Transistors IC SOT-23 Unit: mm Features TrenchFET Power MOSFET +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150 ) * 1 TA=25 ------------------------------------------------TA=70 Pulsed Drain Current *2 Continuous Source Current (diode conduction) *1 Power Dissipation *1 TA=25 -------------------------------------------------TA=70 Jumction Temperature Storage Temperature * 1 Surface Mounted on FR4 Board.t 5 sec. Symbol VDS VGS ID IDM IS PD Tj Tstg -1.0 1.25 0.8 150 -55 to +150 -3.0 -2.4 -12 -0.62 0.75 0.48 5 sec Steady State -40 20 -2.3 -1.85 Unit V V A A A W *2 Pulse width limited by maximum junction temperature. Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient *1 Maximum Junction-to-Ambient *2 Maximum Junction-to-Foot (Drain) Steady State Steady State 5 sec. RthJF Symbol RthJA Typical 75 120 40 Maximum 100 166 50 /W Unit * 1. Surface Mounted on FR4 Board, t * 2. Surface Mounted on FR4 Board. www.kexin.com.cn 1 SMD Type KI2319DS Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance * Forward Transconductance * Diode Forward Voltage * Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Symbol Testconditons Transistors IC Min -40 -1.0 Typ Max Unit V V(BR)DSS VGS = 0 V, ID = -250 A VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr VDD = -20V , RL =20 , ID = -1A , VGEN =- 4.5V , RG = 6 VDS = -20V ,VGS = 0 , f = 1 MHz VDS = -20V ,VGS = -10 V , ID= -3 A VDS = VGS, ID = -250 ìA VDS = 0 V, VGS = 20 V -3.0 100 -1 -10 nA A A 0.065 0.082 0.10 7 -0.8 11.3 1.7 3.3 470 85 65 7 15 25 25 15 25 40 40 ns pF -1.2 17 nC 0.130 S V VDS = -40 V, VGS = 0 V VDS = -40 V, VGS = 0 V, TJ = 55 VDS -5 V, VGS = -10V -6 VGS = -10 V, ID = -3.0 A VGS = -4.5 V, ID = -2.4 A VDS = -5 V, ID = -3.0 A IS = -1.25 A, VGS = 0 V Turn-Off Time * Pulse test: PW 300 ìs duty cycle 2%. td(off) tf Marking Marking C9 2 www.kexin.com.cn
KI2319DS 价格&库存

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