KI2323DS

SMD S MD Type P-Channel 20-V (D-S) MOSFET KI2323DS Transistors IC SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 TrenchFET Power MOSFET +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TJ=150 ) *1,2 TA=25 ------------------------------------------------TA=70 Pulsed Drain Current Continuous Source Current (diode conduction) *1,2 Power Dissipation *1 ,2 TA=25 -------------------------------------------------TA=70 Jumction Temperature Storage Temperature *1 Surface Mounted on 1" X 1" FR4 Board. *2 Pulse width limited by maximum junction temperature. Symbol VDS VGS ID IDM IS PD Tj Tstg -1.0 1.25 0.8 150 -55 to +150 - 4.7 -3.8 -20 -0.6 0.75 0.48 5 sec Steady State -20 8 -3.7 -2.9 Unit V V A A A W Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient * Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) t 5 sec Symbol RthJA RthJF Typical 75 120 40 Maximum 100 166 50 /W Unit Steady State Steady State * Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 SMD Type KI2323DS Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Symbol Testconditons Transistors IC Min -20 -0.40 Typ Max Unit V V(BR)DSS VGS = 0 V, ID = -250 A VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -250 ìA VDS = 0 V, VGS = 8V -1.0 100 -1 -10 nA A A 0.031 0.039 0.041 0.052 0.054 0.068 16 0.7 12.5 -1.2 19 nC S V VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, TJ = 55 VDS -5 V, VGS = -4.5V -20 VGS = -4.5 V, ID = -4.7 A Drain-Source On-State Resistance * rDS(on) VGS = -2.5 V, ID = -4.1 A VGS = -1.8 V, ID = -2.0 A Forward Transconductance * Diode Forward Voltage * Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr Turn-Off Time * Pulse test: PW 300 ìs duty cycle 2%. td(off) tf VDD = -10V , RL =10 , ID = -1A , VGEN =- 4.5V , RG = 6 VDS = -10V ,VGS = 0 , f = 1 MHz VDS = -10V ,VGS = -4.5 V , ID= -4.7 A VDS = -5 V, ID = -4.7 A IS = -1.0 A, VGS = 0 V 1.7 3.3 1020 191 140 25 43 71 48 40 65 110 75 pF ns Marking Marking D3 2 www.kexin.com.cn