KI2325DS

SMD S MD Type P-Channel 150-V (D-S) MOSFET KI2325DS Transistors IC SOT-23 Unit: mm Features TrenchFET Power MOSFET +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 Small Size 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Ultra Low On-Resistance 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TJ=150 ) *1,2 TA=25 ------------------------------------------------TA=70 Pulsed Drain Current Continuous Source Current (diode conduction) *1,2 Single-Pluse Avalanche Current Single-Pulse Avalanche Energy L = 1 0 mH L = 1 0 mH Symbol VDS VGS ID IDM IS IAS EAS PD Tj Tstg 1.25 0.8 150 -55 to +150 -1.0 4.5 1.01 0.75 0.48 -0.69 -0.55 -1.6 -0.6 5 sec Steady State -150 20 -0.53 -0.43 Unit V V A A A mJ Power Dissipation *1 ,2 TA=25 -------------------------------------------------TA=70 Jumction Temperature Storage Temperature *1 Surface Mounted on 1" X 1" FR4 Board. *2 Pulse width limited by maximum junction temperature. W Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient * Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) t 5 sec Symbol RthJA RthJF Typical 75 120 40 Maximum 100 166 50 /W Unit Steady State Steady State * Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 SMD Type KI2325DS Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance * Forward Transconductance * Diode Forward Voltage * Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Symbol Testconditons Transistors IC Min -150 -2.5 Typ Max Unit V V(BR)DSS VGS = 0 V, ID = -250 A VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd Rg Ciss Coss Crss td(on) tr VDD = -75V , RL =75 , ID = -1A , VGEN =- 10V , RG = 6 VDS = -25V ,VGS = 0 , f = 1 MHz f = 1.0 MHz VDS = -75V ,VGS = 10 V , ID= -0.5 A VDS = VGS, ID = -250 ìA VDS = 0 V, VGS = 20 V -4.5 100 -1 -10 nA A A 1.0 1.05 2.2 0.7 7.7 1.5 2.5 9 340 30 16 7 11 16 11 11 17 25 17 135 nC ns 510 pF -1.2 12 nC 1.2 1.3 S V VDS = -150V, VGS = 0 V VDS = -150 V, VGS = 0 V, TJ = 55 VDS -15 V, VGS = -10V -1.6 VGS = -10 V, ID = -0.5 A VGS = -6.0 V, ID = -0.5 A VDS = -15 V, ID = -0.5 A IS = -1.0 A, VGS = 0 V Turn-Off Time Body Diode Reverse Recovery Charge * Pulse test: PW 300 ìs duty cycle 2%. td(off) tf Qrr IF = 0.5 A, di/dt = 100 A/ s 90 Marking Marking D5 2 www.kexin.com.cn