KI2328DS

SMD S MD Type N-Channel 100-V (D-S) MOSFET KI2328DS Transistors IC SOT-23 Unit: mm Features 3 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 2.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TJ=150 ) *1 TA=25 ------------------------------------------------TA=70 Pulsed Drain Current *2 Single-Pluse Avalanche Current *2 Single-Pulse Avalanche Energy L = 1 0 mH L = 1 0 mH Symbol VDS VGS ID IDM IAS EAS IS PD Tj Tstg 1.25 0.8 150 -55 to +150 1.5 1.2 6 6 1.8 0.6 0.75 0.47 W 5 sec Steady State 100 20 1.15 0.92 Unit V V A A mJ Continuous Source Current (Diode Conduction)*1 Power Dissipation *1 TA=25 -------------------------------------------------TA=70 Jumction Temperature Storage Temperature *1 Surface Mounted on 1" X 1" FR4 Board. *2 Pulse width limited by maximum junction temperature. Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient * Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) t 5 sec Symbol RthJA RthJF Typical 80 130 45 Maximum 100 170 55 /W Unit Steady State Steady State * Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 SMD Type KI2328DS Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance * Forward Transconductance * Diode Forward Voltage * Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Symbol Testconditons Transistors IC Min 100 2 Typ Max Unit V V(BR)DSS VGS = 0 V, ID =1 mA VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr VDD = 50V , RL =33 , ID = 0.2A , VGEN =10V , RG = 6 VDS = 50V ,VGS = 10 V , ID= 1.5 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V 100 1 75 6 0.195 0.250 4 0.8 3.3 0.47 1.45 7 11 9 10 11 17 15 15 100 1.2 4.0 nA A A VDS = 80V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 70 VDS 15 V, VGS = 10V VGS = 10 V, ID = 1.5 A VDS = 15 V, ID = 1.5 A IS = 1.0 A, VGS = 0 V S V nC ns Turn-Off Time Body Diode Reverse Recovery Charge * Pulse test: PW 300 ìs duty cycle 2%. td(off) tf Qrr IF = 1.5 A, di/dt = 100 A/ s 50 nC Marking Marking D8 2 www.kexin.com.cn