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KI2335DS

KI2335DS

  • 厂商:

    KEXIN(科信)

  • 封装:

  • 描述:

    KI2335DS - P-Channel 12-V (D-S) MOSFET - Guangdong Kexin Industrial Co.,Ltd

  • 数据手册
  • 价格&库存
KI2335DS 数据手册
SMD S MD Type P-Channel 12-V (D-S) MOSFET KI2335DS Transistors IC SOT-23 Unit: mm Features 3 +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TJ=150 ) *1,2 TA=25 ---------------------------------------------- --TA=70 Pulsed Drain Current Continuous Source Current (Diode Conduction)*1,2 Power Dissipation *1,2 TA=25 --------------------------------------------- ----TA=70 Jumction Temperature Storage Temperature *1 Surface Mounted on 1" X 1" FR4 Board. *2 Pulse width limited by maximum junction temperature. Symbol VDS VGS ID IDM IS PD Tj Tstg 1.25 0.8 150 -55 to +150 -4.0 -3.3 -15 -1.6 0.75 0.48 5 sec Steady State -12 8 -3.2 -2.6 Unit V V A A W Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient * Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) t 5 sec Symbol RthJA RthJF Typical 75 120 40 Maximum 100 166 50 /W Unit Steady State Steady State * Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 SMD Type KI2335DS Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Symbol Testconditons Transistors IC Min -12 -0.45 Typ Max Unit V V(BR)DSS VGS = 0 V, ID =-10 A VGS(th) IGSS IDSS VDS = VGS, ID = -250 A VDS = 0 V, VGS = 8V 100 -1 -10 -15 -6 0.042 0.051 0.058 0.070 0.082 0.106 7 -1.2 9 15 nA A VDS =-9.6V, VGS = 0 V VDS = -9.6 V, VGS = 0 V, TJ = 55 On-State Drain Current ID(on) VDS VDS -5V, VGS = -4.5V -5 V, VGS = -2.5V A VGS =-4.5V, ID = -4.0A Drain-Source On-State Resistance * rDS(on) VGS = -2.5V, ID = -3.5 A VGS =-1.8 V, ID = -2.0 A Forward Transconductance * Diode Forward Voltage * Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr Turn-Off Time * Pulse test: PW 300 ìs duty cycle 2%. td(off) tf VDD = -6V , RL =6 , ID = -1.0A , VGEN =-4.5V , RG = 6 VDS = -6 V, VGS = 0, f = 1 MHz VDS = -6V ,VGS = -4.5 V , ID= -4.0A VDS =-5 V, ID =-4.0A IS = -1.6 A, VGS = 0 V S V 1.9 1.5 1225 260 130 13 15 50 19 20 25 70 35 nC pF ns Marking Marking E5 2 www.kexin.com.cn
KI2335DS 价格&库存

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