KI2351DS

SMD S MD Type P-Channel 20-V (D-S) MOSFET KI2351DS SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 PWM Optimized 100 % Rg tested +0.1 1.3-0.1 TrenchFET Power MOSFET 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TJ=150 ) TC=25 ---------------------------------------------- --TC=70 Continuous Drain Current(TJ=150 ) *1,2 TA=25 -----------------------------------------------TA=70 Pulsed Drain Current Continuous Source Drain Diode Current TC=25 Symbol VDS VGS ID ID IDM IS 5 sec -20 12 -2.8 -2.4 -2.2 -1.8 -10 -2 -0.91 PD PD Tj Tstg 2.1 1.5 1.0 0.7 150 -55 to +150 W W A Unit V V A A Continuous Source Drain Diode Current *1,2 TA=25 Power Dissipation --------------------------------------------- -Power Dissipation *1,2 --------------------------------------------- Jumction Temperature Storage Temperature *1Surface mounted on 1" x 1" FR4 Board. *2 t = 10 sec Tc=25 -Tc=70 TA=25 ---TA=70 Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient * Maximum Junction-to-Foot (Drain) t 5 sec Symbol RthJA RthJF Typical 90 60 Maximum 115 75 Unit /W Steady State * Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 SMD Type KI2351DS Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance * Forward Transconductance * Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Source-Drain Diode Current Pulse Diode Forward Current* Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time * Pulse test: PW 300 s duty cycle 2%. Symbol VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qg Qgs Qgd Rg td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb IF = -2.0 A, di/dt = 100 A/ s, TJ = 25 IS = -2.0 A TC = 25 VDD = -10V , RL =5.26 , ID = -1.9A , VGEN =-4.5V , RG = 1 f = 1 MHz VDS = -10V ,VGS = -4.5 V , ID= -2.4A VDS = -10 V, VGS = -5.0 V, ID = -2.4 A VDS = -10 V, VGS = 0, f = 1 MHz VDS = VGS, ID = -250 A VDS = 0 V, VGS = 12 V Testconditons VGS = 0 V, ID =-250 A ID = -250 A Transistors IC Min -20 Typ Max Unit V -16.7 2.1 -0.6 -1.5 100 -1 -10 -10 0.092 0.115 0.164 0.205 5.5 250 80 55 3.4 3.2 0.5 1.4 8.5 9 30 32 16 13 14 45 48 24 -2 -10 -0.8 17 5 14 3 -1.2 26 8 5.1 5 mV/ V nA A A VDS =-20V, VGS = 0 V VDS = -20 V, VGS = 0 V, TJ = 55 VDS -5V, VGS = -4.5V VGS =-4.5V, ID = -2.4A VGS = -2.5V, ID = -1.8 A VDS =-10 V, ID =-2.4A S pF nC nC ns A V ns nC ns Marking Marking G1 2 www.kexin.com.cn