KI4403BDY

SMD S MD Type P-Channel 1.8-V (G-S) MOSFET KI4403BDY IC IC Features TrenchFET Power MOSFET Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150 ) * TA=25 ------------------------------------------------TA=70 Pulsed Drain Current Continuous Source Current (diode conduction) * Power Dissipation * TA=25 -------------------------------------------------TA=70 Jumction Temperature Storage Temperature * Surface Mounted on 1" X 1" FR4 Board. Symbol VDS VGS ID IDM IS PD Tj Tstg -2.3 2.5 1.6 150 -55 to +150 -9.9 -7.9 -30 -1.3 1.35 0.87 10 sec Steady State -20 8 -7.3 -5.8 Unit V V A A A W www.kexin.com.cn 1 SMD Type KI4403BDY Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Symbol VGS(th) IGSS IDSS ID(on) Testconditons VDS = VGS, ID = -350 VDS = 0 V, VGS = 8V A Min -0.45 Typ Max -1.0 100 -1 -10 20 0.014 0.017 0.018 0.023 0.024 0.032 36 -0.8 33 VDS = -10V ,VGS = -5 V , ID= -9.9 A 4.2 7.6 25 VDD = -10V , RL = 15 , ID = -1A , VGEN =- 4.5V , RG = 6 45 150 70 IF = -2.3 A, di/dt = 100 A/ s 40 40 70 225 110 60 -1.1 50 IC IC Unit V nA A A VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, TJ = 70 VDS -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -9.9 A Drain-Source On-State Resistance * rDS(on) VGS = -2.5 V, ID = -8.5A VGS = -1.8 V, ID = -3.1 A Forward Transconductance * Diode Forward Voltage * Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test: PW 300 ìs duty cycle 2%. gfs VSD Qg Qgs Qgd td(on) tr td(off) tf trr VDS = -15 V, ID = -9.9 A IS = -2.3A, VGS = 0 V S V nC ns 2 www.kexin.com.cn