KI4453DY

SMD S MD Type P-Channel 12-V (D-S) MOSFET KI4453DY IC IC Features TrenchFET Power MOSFETS Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation * TA = 25 TA = 70 Operating Junction and Storage Temperature Range * Surface Mounted on 1" X 1" FR4 Board. TJ, Tstg )* TA = 25 TA = 70 IDM IS PD -2.7 3.0 1.9 -55 to 150 Symbol VDS VGS ID -14 -11.5 -50 -1.36 1.5 0.95 A W 10 secs Steady State -12 8 -10 -8 A Unit V Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient * Maximum Junction-to-Foot(Drain) * Surface Mounted on 1" X 1" FR4 Board. t 10 sec Symbol RthJA RthJF Typical 33 70 16 Maximum 42 84 21 /W Unit Steady State Steady State www.kexin.com.cn 1 SMD Type KI4453DY Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Symbol VGS(th) IGSS IDSS ID(on) Testconditons VDS = VGS, ID = -600 VDS = 0 V, VGS = A Min -0.4 Typ Max -0.9 100 -1 -10 -30 0.0051 0.0065 IC IC Unit V nA A A A 8V VDS = -12 V, VGS = 0 V VDS =-20 V, VGS = 0 V, TJ =70 VDS =- 5 V, VGS =- 4.5 V VGS = -4.5 V, ID = -14A Drain-Source On-State Resistance rDS(on) VGS = -2.5 V, ID = -13A VGS = -1.8V, ID = -12A 0.0062 0.00775 0.0082 0.01025 80 -0.6 110 -1.1 165 S V nC nC nC 170 350 620 430 270 ns ns ns ns ns Forward Transconductance * Schottky Diode Forward Voltage * Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Gate Resistance * Pulse test; pulse width 300 gfs VSD Qg Qgs Qgd td(on) tr td(off) tf trr Rg s, duty cycle VDS = -6 V, ID = -14 A IS = -2.7A, VGS = 0 V VDS = -6 V, VGS = -5 V, ID = -14A 15 27.5 110 VDD = -6 V, RL = 6 ID = -1 A, VGEN = -4.5 V, RG = 6 235 410 285 IF = -2.1A, di/dt = 100 A/ s 180 3.6 2%. 2 www.kexin.com.cn