KI4532ADY

SMD S MD Type N- and P-Channel 30-V (D-S) MOSFET KI4532ADY Transistors IC PIN Configuration Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on 1" X 1" FR4 Board. TJ, Tstg IDM IS PD 1.7 2 1.3 0.94 1.13 0.73 Symbol VDS VGS ID 4.9 3.9 N-Channel 10 sec Steady State 30 20 3.7 2.9 20 -1.7 2 1.3 -55 to 150 -1 1.2 0.76 -3.9 -3.1 P-Channel 10 sec Steady State -30 20 -3 -2.4 V V A A A A W W Unit Thermal Resistance Ratings TA = 25 Parameter t 10 sec Symbol N-Channel Typ Maximum Junction-to-Ambient* Maximum Junction-to-Foot RthJA RthJc 55 90 40 Max 62.5 110 50 P-Channel Typ 54 87 34 Max 62.5 105 45 /W Unit Steady State Steady State *Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 SMD Type KI4532ADY Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 20 V VDS = 0 V VGS = 20 V VDS = 30V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 VDS = -30V, VGS = 0 V, TJ = 55 On State Drain Currenta ID(on) VDS VDS 5 V, VGS = 10 V -5 V, VGS = -10 V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS = -10 V, VGS = -10 V, ID = -3.9A N Channel VDD = 10 V, RL = 10 ID= 1A, VGEN = 10V, Rg = 6 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Channel VDD = -10 V, RL = 10 Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width tf trr ID= -1 A, VGEN = -10 V, Rg = 6 IF = 1.7 A, di/dt = 100 A/ IF = -1.7 A, di/dt = 100 A/ s s N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 Min 1 -1 Transistors IC Typ Max Unit V 100 100 1 -1 5 -5 A A 0.044 0.053 0.062 0.080 0.062 0.075 0.105 0.135 11 5 0.80 -0.82 8 10 1.4 2 1.2 1.9 12 8 10 9 23 21 8 10 25 27 20 15 20 18 45 40 15 20 40 40 ns 1.2 -1.2 16 20 nC S V nA VGS = 10 V, ID = 4.9A Drain Source On State Resistance* rDS(on) VGS = -10 V, ID = -3.9A VGS = 4.5 V, ID = 4.1A VGS = -4.5 V, ID = -3.0A Forward Transconductance* Diode Forward Voltage* Total Gate Charge Gate Source Charge Gate Drain Charge Turn On Time Rise Time gfs VSD Qg Qgs Qgd td(on) tr VDS = 15 V, ID = 4.9A VDS = -15 V, ID = -2.5A IS = 1.7A, VGS = 0 V IS = -1.7A, VGS = 0 V N-Channel VDS = 10 V, VGS = 10V, ID = 4.9A Turn Off Delay Time td( off) 300 s, duty cycle 2%. 2 www.kexin.com.cn