KI4542DY

SMD S MD Type Transistors IC 30V Complementary PowerTrench MOSFET KI4542DY Features N-Channel 6 A, 30 V RDS(ON) = 28m RDS(ON) = 35m P-Channel -6 A, -30 V RDS(ON) = 32m RDS(ON) = 45m @ VGS =- 10 V @ VGS =-4.5V @ VGS = 10V @ VGS =4.5V Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Single Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Temperature Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Case (Note 1) TJ, TSTG R R JA JC Symbol VDSS VGS ID PD N-Channel 30 20 6 20 2 1.6 P- Channel -30 20 -6 -20 Unit V V A A W PD 1.2 1 -55 to 175 78 40 W /W /W www.kexin.com.cn 1 SMD Type KI4542DY Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient IDSS IGSS VGS(th) Symbol BVDSS Testconditons VGS = 0 V, ID = 250 VGS = 0 V, ID = -250 ID = 250 ID = -250 A A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Transistors IC Min 30 -30 Typ Max Unit V A, Referenced to 25 A, Referenced to 25 23 -21 1 -1 100 100 1 -1 1.5 -1.7 -4 4 19 32 25 21 28 48 35 32 51 45 3 -3 mV/ VDS = 24V, VGS = 0 V VDS = -24 V, VGS = 0 V VGS = VGS = 20V, VDS = 0 V 20 V, VDS = 0 V A A A nA V VDS = VGS, ID = 250 VDS = VGS, ID = -250 ID = 250 ID = -250 A, Referenced to 25 A, Referenced to 25 mV/ VGS = 10 V, ID =6A Static Drain-Source On-Resistance RDS(on) VGS = 10 V, ID =6A,TJ=125 VGS = 4.5 V, ID = 5A VGS = -10 V, ID =-6 A Static Drain-Source On-Resistance RDS(on) VGS = -10 V, ID =-5 A,TJ=125 VGS = -4.5 V, ID =-5A On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time ID(on) gFS Ciss Coss P-Channel Crss td(on) tr td(off) VDS = -15 V, VGS = 0 V,f = 1.0 MHz N-Channel VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 P-Channel VDD = -15 V, ID = -1 A, VGS = -10 V, RGEN = 6 (Note 2) (Note 2) VGS = 10 V, VDS = 5V VGS = -10 V, VDS = -5V VDS = 15V, ID = 6A VDS = -10V, ID = -6A N-Channel VDS = 15 V, VGS = 0 V,f = 1.0 MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs P-Channel Qgd VDS=-10V,ID=-6A,VGS=-5V(Note 2) N-Channel VDS =15V,ID=7.5A,VGS=5V(Note 2) N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 P-Ch m 29 30 A 18 16 830 1540 185 400 80 170 6 13 10 22 18 47 5 18 9 15 2.8 4 3.1 5 12 24 18 35 29 75 12 30 13 20 nC nC nC S pF pF pF ns ns ns Turn-Off Fall Time tf ns 2 www.kexin.com.cn SMD Type KI4542DY Electrical Characteristics Ta = 25 Parameter Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Symbol IS VSD VGS = 0 V, IS = 1.3A (Not 2) VGS = 0 V, IS = -1.3A (Not 2) Testconditons N-Ch P-Ch N-Ch P-Ch Transistors IC Min Typ Max 1.3 -1.3 Unit A V 0.7 -0.7 1.2 -1.2 www.kexin.com.cn 3