SMD S MD Type
N- and P-Channel 30-V (D-S) MOSFET KI4544DY
Transistors IC
PIN Configuration
Absolute Maximum Ratings TA = 25
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient * *Surface Mounted on FR4 Board, t 10 sec. TJ, Tstg RthJA IDM IS PD Symbol VDS VGS ID N-Channel 30 20 6.5 5.4 20 1.7 2.4 1.5 -55 to 150 52 /W P-Channel -30 20 5.7 4.0 20 -1.7 Unit V V A A A A W W
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1
SMD Type
KI4544DY
Electrical Characteristics TJ = 25
Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 20 V VDS = 0 V VGS = 20 V VDS = 30V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 VDS = -30V, VGS = 0 V, TJ = 55 VDS On State Drain Currenta ID(on) VDS VDS VDS 5 V, VGS = 10 V -5 V, VGS = -10 V 5 V, VGS =4.5 V -5 V, VGS = -4.5 V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS = -15 V, VGS = -10 V, ID = -5.7A N Channel VDD = 15 V, RL = 15 ID= 1A, VGEN = 10V, Rg = 6 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Channel VDD = -15 V, RL = 15 Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width tf trr ID= -1 A, VGEN = -10 V, Rg = 6 IF = 1.7 A, di/dt = 100 A/ IF = -1.7 A, di/dt = 100 A/ s s N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 5 -5 Min 1 -1
Transistors IC
Typ
Max
Unit V
100 100 1 -1 5 -5 A A A 0.027 0.035 0.036 0.045 0.038 0.050 0.060 0.090 15 9 0.75 -0.75 18 19 4.2 4.5 3.5 3.6 13 13 12 15 31 37 10 14 30 35 30 30 30 30 60 70 30 30 70 70 ns 1.2 -1.2 35 40 nC S V nA
VGS = 10 V, ID = 6.5A Drain Source On State Resistance* rDS(on) VGS = -10 V, ID = -5.7A VGS = 4.5 V, ID = 5.4A VGS = -4.5 V, ID = -4.0A Forward Transconductance* Diode Forward Voltage* Total Gate Charge Gate Source Charge Gate Drain Charge Turn On Time Rise Time gfs VSD Qg Qgs Qgd td(on) tr VDS = 15 V, ID = 6.5A VDS = -15 V, ID = -5.7A IS = 1.7A, VGS = 0 V IS = -1.7A, VGS = 0 V N-Channel VDS = 15 V, VGS = 10V, ID = 6.5A
Turn Off Delay Time
td( off)
300 s, duty cycle 2%.
2
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