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KI4559EY

KI4559EY

  • 厂商:

    KEXIN(科信)

  • 封装:

  • 描述:

    KI4559EY - N-Channel 60-V (D-S), 175 MOSFET - Guangdong Kexin Industrial Co.,Ltd

  • 数据手册
  • 价格&库存
KI4559EY 数据手册
SMD S MD Type N-Channel 60-V (D-S), 175 KI4559EY MOSFET IC IC PIN Configuration Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient * *Surface Mounted on FR4 Board, t 10 sec. TJ, Tstg RthJA IDM IS PD Symbol VDS VGS ID N-Channel 60 20 4.5 3.8 30 2 2.4 1.7 -55 to 175 62.5 /W P-Channel -60 20 3.1 2.6 30 -2 Unit V V A A A A W W www.kexin.com.cn 1 SMD Type KI4559EY Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 20 V VDS = 0 V VGS = 20 V VDS = 60V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -60V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55 VDS = -60V, VGS = 0 V, TJ =55 On State Drain Currenta ID(on) VDS VDS 5 V, VGS = 10 V -5 V, VGS = -10 V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS = -30 V, VGS = -10 V, ID = -3.1A N Channel VDD = 30 V, RL = 30 ID= 1A, VGEN = 10V, Rg = 6 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Channel VDD = -30 V, RL = 30 Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width tf trr ID= -1 A, VGEN = -10 V, Rg = 6 IF = 2 A, di/dt = 100 A/ IF = -2 A, di/dt = 100 A/ s s N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 0.045 0.055 0.100 0.120 0.055 0.075 0.125 0.150 13 7.5 0.9 -0.8 19 16 4 4 3 1.6 13 8 11 10 36 12 11 35 35 60 20 15 20 20 60 25 20 50 60 90 1.2 -1.2 30 25 Min 1 -1 100 100 2 -2 25 -25 Typ Max IC IC Unit V nA A A A VGS = 10 V, ID =4.5A Drain Source On State Resistance* rDS(on) VGS = -10 V, ID = -3.1A VGS = 4.5 V, ID = 3.9A VGS = -4.5 V, ID = -2.8A Forward Transconductance* Diode Forward Voltage* Total Gate Charge Gate Source Charge Gate Drain Charge Turn On Time Rise Time gfs VSD Qg Qgs Qgd td(on) tr VDS = 15 V, ID = 4.5A VDS = -15 V, ID = -3.1A IS = 2A, VGS = 0 V IS = -2A, VGS = 0 V N-Channel VDS = 30 V, VGS = 10V, ID =4.5A S V nC Turn Off Delay Time td( off) ns 300 s, duty cycle 2%. 2 www.kexin.com.cn
KI4559EY 价格&库存

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