KI4980DY

SMD S MD Type Dual N-Channel 80-V (D-S) MOSFET KI4980DY IC IC Features Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction) * Maximum Power Dissipation * TA = 25 TA = 70 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient* * Surface Mounted on FR4 Board, t 10 sec. TJ, Tstg RthJA IDM IS PD Symbol VDS VGS ID Rating 80 20 3.7 2.9 30 1.7 2.0 1.3 -55 to 150 62.5 /W A W A Unit V www.kexin.com.cn 1 SMD Type KI4980DY Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current * Drain-Source On-State Resistance* Forward Transconductance* Schottky Diode Forward Voltage* Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width 300 s, duty cycle Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd Rg td(on) tr td(off) tf trr 2 %. IF = 1.7 A, di/dt = 100 A/ s VDD = 40 V, RL = 40 ID = 1 A, VGEN = 10 V, RG = 6 Ù 10 10 30 10 75 VDS = 40 V, VGS = 10V, ID = 3.7 A Testconditons VDS = VGS, ID = 250 ìA VDS = 0 V, VGS = 20 V Min 2 100 1 20 20 0.062 0.071 12 1.2 15 4 3.2 5.1 20 20 60 20 110 30 0.075 0.095 Typ Max IC IC Unit V nA A A VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 55 VDS = 5 V, VGS = 10 V VGS = 10 V, ID =3.7 A VGS = 6.0 V, ID = 3.2 A VDS = 15 V, ID = 3.7 A IS = 1.7 A, VGS = 0 V S V nC nC nC ns ns ns ns ns 2 www.kexin.com.cn