KI5402DC

SMD S MD Type N-Channel 30-V (D-S) MOSFET KI5402DC IC IC Features Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation * TA = 25 TA = 70 Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) * Surface Mounted on 1" X 1' FR4 Board. t 5 sec Symbol RthJA RthJF Typ 40 80 15 TJ, Tstg )* TA = 25 TA = 70 IDM IS PD 2.1 2.5 1.3 -55 to 150 260 Max 50 95 20 /W Unit Symbol VDS VGS ID 6.7 4.8 20 1.1 1.3 0.7 W 5 secs Steady State 30 20 4.9 3.5 A Unit V Steady-State Steady-State www.kexin.com.cn 1 SMD Type KI5402DC Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Drain-Source On-State Resistance* Forward Transconductance* Schottky Diode Forward Voltage* Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width 300 s, duty cycle Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf trr 2%. IF = 1.1 A, di/dt = 100 A/ s VDD = 15 V, RL = 15 Ù ID = 1 A, VGEN = 10V, RG = 6 VDS = 15 V, VGS = 10 V, ID = 4.9 A Testconditons VDS = VGS, ID = 250 ìA VDS = 0 V, VGS = 20 V Min 1.0 100 1 5 20 0.030 0.045 15 0.8 13 1.3 3.1 10 10 25 10 30 15 15 40 15 60 1.2 20 0.035 0.055 Typ Max IC IC Unit V nA A A A VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55 VDS 5 V, VGS = 10 V VGS = 10 V, ID = 4.9 A VGS = 4.5 V, ID = 3.9 A VDS = 10 V, ID = 4.9 A IS = 1.1 A, VGS = 0 V S V nC nC nC ns ns ns ns ns 2 www.kexin.com.cn