KI5406DC

SMD S MD Type N-Channel 2.5-V (G-S) MOSFET KI5406DC IC IC Features TrenchFET Power MOSFETS: 2.5-V Rated Low Thermal Resistance Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation * TA = 25 TA = 85 Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) * Surface Mounted on 1" X 1' FR4 Board. t 5 sec Symbol RthJA RthJF Typ 40 80 15 TJ, Tstg )* TA = 25 TA = 85 IDM IS PD 2.1 2.5 1.3 -55 to 150 260 Max 50 95 20 /W Unit 20 1.1 1.3 0.7 W Symbol VDS VGS ID 9.5 5 secs Steady State 12 8 6.9 A Unit V Steady-State Steady-State www.kexin.com.cn 1 SMD Type KI5406DC Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Drain-Source On-State Resistance* Forward Transconductance* Schottky Diode Forward Voltage* Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width 300 s, duty cycle Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf trr 2%. IF = 1.1 A, di/dt = 100 A/ s VDD = 6 V, RL = 6 ID = 1 A, VGEN = 4.5V, RG = 6 VDS = 6V, VGS = 4.5 V, ID = 6.9 A Testconditons VDS = VGS, ID = 1.2mA VDS = 0 V, VGS = 8V Min 0.6 100 1 5 20 0.017 0.021 30 0.7 13.7 2.3 4.1 17 46 54 29 35 25 70 80 45 70 20 0.028 0.039 Typ Max IC IC Unit V nA A A A VDS = 9.6 V, VGS = 0 V VDS = 9.6V, VGS = 0 V, TJ = 85 VDS 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 6.9A VGS = 2.5 V, ID = 2A VDS = 10 V, ID = 6.9A IS = 1.1 A, VGS = 0 V S V nC nC nC ns ns ns ns ns 2 www.kexin.com.cn