KI5447DC

SMD S MD Type P-Channel 20-V (D-S) MOSFET KI5447DC IC IC Features Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation * TA = 25 TA = 85 Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) * Surface Mounted on 1" X 1' FR4 Board. t 5 sec Symbol RthJA RthJF Typ 43 83 14 TJ, Tstg )* TA = 25 TA = 85 IDM IS PD -2.1 2.5 1.3 -55 to 150 260 Max 50 95 20 /W Unit Symbol VDS VGS ID -4.8 -3.5 -15 -1.1 1.3 0.7 W 5 secs Steady State -20 8 -3.5 -2.5 A Unit V Steady-State Steady-State www.kexin.com.cn 1 SMD Type KI5447DC Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Symbol VGS(th) IGSS IDSS ID(on) Testconditons VDS = VGS, ID = -250 A VDS = 0 V, VGS = 8V Min -0.45 100 -1 -5 -15 0.064 0.091 0.130 9 -0.8 6.5 VDS = -10V, VGS = -4.5 V, ID = -3.5 A 1.4 1.3 14 VDD = -10 V, RL = 10 ID = -1 A, VGEN = -4.5V, RG = 6 29 42 35 IF = -1.1 A, di/dt = 100 A/ s 30 21 45 65 55 60 -1.2 10 0.076 0.110 0.160 Typ Max IC IC Unit V nA A A A VDS = -16V, VGS = 0 V VDS = -16V, VGS = 0 V, TJ = 85 VDS - 5 V, VGS = -4.5 V VGS = -4.5 V, ID = -3.5A Drain-Source On-State Resistance* rDS(on) VGS = -2.5 V, ID = -2.9A VGS = -1.8 V, ID = -1A Forward Transconductance* Schottky Diode Forward Voltage* Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width 300 s, duty cycle gfs VSD Qg Qgs Qgd td(on) tr td(off) tf trr 2%. VDS = -10 V, ID = -3.5A IS = -1.1 A, VGS = 0 V S V nC nC nC ns ns ns ns ns 2 www.kexin.com.cn