KI5504DC

SMD S MD Type Complementary 30-V (D-S) MOSFET KI5504DC IC IC PIN Configuration Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 85 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 85 Operating Junction and Storage Temperature Range *Surface Mounted on 1" X 1" FR4 Board. TJ, Tstg IDM IS PD 1.8 2.1 1.1 0.9 1.1 0.6 Symbol VDS VGS ID 3.9 2.8 2.9 2.1 10 -1.8 2.1 1.1 -55 to 150 -0.9 1.1 0.6 N-Channel 5 secs Steady State 30 20 2.8 2.0 2.1 1.5 P-Channel 5 secs Steady State -30 V V A A A A W W Unit Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Case (Drain) *Surface Mounted on 1" X 1" FR4 Board. t 5 sec Symbol RthJA RthJF Typ 50 90 30 Max 60 110 40 /W Unit Steady State Steady State www.kexin.com.cn 1 SMD Type KI5504DC Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 20 V VDS = 0 V VGS = 20 V VDS = 24V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 85 VDS = -24V, VGS = 0 V, TJ = 85 On State Drain Currenta ID(on) VDS VDS 5 V, VGS = 10 V -5 V, VGS = -10 V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS = -15 V, VGS = -10 V, ID = -2.1A N Channel VDD = 15 V, RL = 15 ID= 1A, VGEN = 10V, Rg = 6 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Channel VDD = -15 V, RL = 15 Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width tf trr ID= -1 A, VGEN = -10 V, Rg = 6 IF =0.9 A, di/dt = 100 A/ IF = -0.9 A, di/dt = 100 A/ s s N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 10 -10 0.072 0.085 0.137 0.165 0.120 0.143 0.240 0.290 6 3 0.8 -0.8 5 5.5 0.8 1.2 1.0 0.9 7 8 12 11 12 14 7 8 40 40 11 12 18 18 18 21 11 12 80 80 1.2 -1.2 7.5 6.6 Min 0.1 -1.0 100 100 1 -1 5 -5 Typ Max IC IC Unit V nA A A VGS = 10 V, ID = 11.8A Drain Source On State Resistance* rDS(on) VGS = -10 V, ID = -2.1A VGS = 4.5 V, ID = 2.2A VGS = -4.5 V, ID = -1.6A Forward Transconductance* Diode Forward Voltage* Total Gate Charge Gate Source Charge Gate Drain Charge Turn On Time Rise Time gfs VSD Qg Qgs Qgd td(on) tr VDS = 15 V, ID = 2.9A VDS = -15 V, ID = -2.1A IS = 0.9A, VGS = 0 V IS = -0.9A, VGS = 0 V N-Channel VDS = 15V, VGS = 10V, ID = 2.9A S V nC Turn Off Delay Time td( off) ns 300 s, duty cycle 2%. 2 www.kexin.com.cn