KI5515DC

SMD S MD Type Complementary 20-V (D-S) MOSFET KI5515DC IC IC Features TrenchFET Power MOSFETS Ultra Low rDS(on) and Excellent Power Handling In Compact Footprint Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 85 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 85 Operating Junction and Storage Temperature Range *Surface Mounted on 1" X 1" FR4 Board. TJ, Tstg IDM IS PD 1.8 2.1 1.1 Symbol VDS VGS ID 5.9 4.2 20 0.9 1.1 0.6 -1.8 2.1 1.1 -55 to 150 4.4 3.1 N-Channel 5 secs Steady State 20 8 -4.1 -2.9 -15 -0.9 1.1 0.6 -3 -2.2 P-Channel 5 secs Steady State -20 V V A A A A W W Unit Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Case (Drain) t 5 sec Symbol RthJA RthJF Typ 50 90 30 Max 60 110 40 /W Unit Steady State Steady State *Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 SMD Type KI5515DC Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 8 V VDS = 0 V VGS = 8V VDS = 20V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85 VDS = -20V, VGS = 0 V, TJ = 85 On State Drain Currenta ID(on) VDS VDS 5 V, VGS = 4.5 V -5 V, VGS = -4.5 V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS = -10 V, VGS = -4.5 V, ID = -3A N Channel VDD = 10 V, RL = 10 ID= 1A, VGEN = 4.5V, Rg = 6 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Channel VDD = -10 V, RL = 10 Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width tf trr ID= -1 A, VGEN = -4.5 V, Rg = 6 IF =0.9 A, di/dt = 100 A/ IF = -0.9 A, di/dt = 100 A/ s s N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -15 0.032 0.040 0.069 0.086 0.036 0.045 0.097 0.121 0.042 0.052 0.137 0.171 22 8 0.8 -0.8 5 5.5 0.85 0.91 1 1.6 20 18 36 32 30 42 12 26 45 30 30 30 55 50 45 65 20 40 90 60 1.2 -1.2 7.5 8.5 Min 0.4 -0.4 Typ Max 1.0 -1.0 100 100 1 -1 5 -5 IC IC Unit V nA A A VGS = 4.5 V, ID = 4.4A VGS = -4.5 V, ID = -3.0A Drain Source On State Resistance* rDS(on) VGS = 2.5 V, ID = 4.1A VGS = -2.5 V, ID = -2.5A VGS = 1.8 V, ID = 1.9A VGS = -1.8 V, ID = -0.6A Forward Transconductance* Diode Forward Voltage* Total Gate Charge Gate Source Charge Gate Drain Charge Turn On Time Rise Time gfs VSD Qg Qgs Qgd td(on) tr VDS = 10 V, ID = 4.4A VDS = -10 V, ID = -3A IS = 0.9A, VGS = 0 V IS = -0.9A, VGS = 0 V N-Channel VDS = 10V, VGS = 4.5V, ID = 4.4A S V nC Turn Off Delay Time td( off) ns 300 s, duty cycle 2%. 2 www.kexin.com.cn