KI5902DC

SMD S MD Type Dual N-Channel 30-V (D-S) MOSFET KI5902DC IC IC Features Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 ) TA = 25 TA = 85 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation * TA = 25 TA = 85 Operating Junction and Storage Temperature Range Soldering Recommendations *Surface Mounted on 1" X 1" FR4 Board. TJ, Tstg IDM IS PD 4.8 2.1 1.1 -55 to 150 260 Symbol VDS VGS ID 3.9 2.8 10 0.9 1.1 0.6 W 5secs 30 20 2.9 2.1 A Steady State Unit V Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient * Maximum Junction-to-Foot (Drain) * Surface Mounted on 1" X 1" FR4 Board. t 5 sec Symbol RthJA RthJF Typical 50 90 30 Maximum 60 110 40 /W Unit Steady-State Steady-State www.kexin.com.cn 1 SMD Type KI5902DC Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Drain Source On State Resistance* Forward Transconductanceb Schottky Diode Forward Voltage* Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test :Pulse width Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf trr IF = 0.9 A, di/dt = 100 A/ s VDD=15V,RL=15 ,ID=1A,VGEN=10V,RG=6 VDS = 15 V, VGS = 10 V, ID = 2.9 A Testconditons VDS = VGS, ID = 250 VDS = 0 V, VGS = A Min 1.0 100 1 Typ Max IC IC Unit V nA A 20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 85 VDS 5 V, VGS = 10 V 10 0.072 0.120 20 0.8 5 0.8 1.0 7 12 12 7 40 5 A 0.085 0.143 S 1.2 7.5 nC V VGS = 10 V, ID = 2.9 A VGS = 4.5 V, ID = 2.2A VDS = 15 V, ID = 2.9 A IS = 0.9 A, VGS = 0 V 11 18 18 11 80 ns ns 300 s,duty cycle 2% 2 www.kexin.com.cn