KI5935DC

SMD S MD Type Dual P-Channel 1.8-V (G-S) MOSFET KI5935DC IC IC Features TrenchFET Power MOSFETS Low rDS(on) Dual and Excellent Power Handling In A Compact Footprint Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation * TA = 25 TA = 85 Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) * Surface Mounted on 1" X 1' FR4 Board. t 5 sec Symbol RthJA RthJF Typ 50 90 30 TJ, Tstg )* TA = 25 TA = 85 IDM IS PD -1.8 2.1 1.1 -55 to 150 260 Max 60 110 40 /W Unit Symbol VDS VGS ID -4.1 -2.9 -15 -0.9 1.1 0.6 W 5 secs Steady State -20 8 -3.0 -2.2 A Unit V Steady-State Steady-State www.kexin.com.cn 1 SMD Type KI5935DC Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Symbol VGS(th) IGSS IDSS ID(on) Testconditons VDS = VGS, ID = -250 A VDS = 0 V, VGS = 8V Min -0.4 Typ Max 1.0 100 -1 -5 -15 0.069 0.097 0.137 8 -0.8 5.5 VDS = -10V, VGS = -4.5 V, ID = -3 A 0.91 1.6 18 VDD = -10 V, RL = 10 ID = -1 A, VGEN = -4.5V, RG = 6 32 42 26 IF = -0.9 A, di/dt = 100 A/ s 30 30 50 65 40 60 -1.2 8.5 0.086 0.121 0.171 IC IC Unit V nA A A A VDS = -16V, VGS = 0 V VDS = -16V, VGS = 0 V, TJ = 85 VDS - 5 V, VGS = -4.5 V VGS = -4.5 V, ID = -3A Drain-Source On-State Resistance* rDS(on) VGS = -2.5 V, ID = -2.5A VGS = -1.8 V, ID = -0.6A Forward Transconductance* Schottky Diode Forward Voltage* Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width 300 s, duty cycle gfs VSD Qg Qgs Qgd td(on) tr td(off) tf trr 2%. VDS = -10 V, ID = -3A IS = -0.9 A, VGS = 0 V S V nC nC nC ns ns ns ns ns 2 www.kexin.com.cn