KI7540DP

SMD S MD Type N- and P-Channel 12-V (D-S) MOSFET KI7540DP IC IC Features TrenchFET Power MOSFET PWM Optimized for High Efficiency Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on 1" X 1" FR4 Board. TJ, Tstg IDM IS PD 2.9 3.5 2.2 1.1 1.4 0.9 -55 to 150 Symbol VDS VGS ID 11.8 9.5 N-Channel 10 secs Steady State 12 8 7.6 6.1 20 -2.9 3.5 2.2 -1.1 1.4 0.9 -8.9 -7.1 P-Channel 10 secs Steady State -12 8 -5.7 -4.6 V V A A A A W W Unit Thermal Resistance Ratings Parameter t 10 sec Symbol N-Channel Typ Maximum Junction-to-Ambient* Maximum Junction-to-Case (Drain) RthJA RthJC 26 60 3.9 Max 35 85 5.5 P-Channel Typ 26 60 3.9 Max 35 85 5.5 /W Unit Steady State Steady State *Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 SMD Type KI7540DP Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 8 V VDS = 0 V VGS = 8 V VDS = 9.6V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -9.6V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 VDS = -20V, VGS = 0 V, TJ = 55 On State Drain Currenta ID(on) VDS VDS 5 V, VGS = 4.5 V -5 V, VGS = -4.5 V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS = -6 V, VGS = -4.5 V, ID = -8.9A P-Ch N-Ch P-Ch N-Ch P-Ch N Channel VDD = 6 V, RL = 6 ID= 1A, VGEN = 4.5V, Rg = 6 N-Ch P-Ch N-Ch P-Ch P-Channel VDD = -6 V, RL = 6 Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width tf trr ID= -1 A, VGEN = -4.5 V, Rg = 6 IF =2.9 A, di/dt = 100 A/ IF = -2.9 A, di/dt = 100 A/ s s N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 0.014 0.017 0.026 0.032 0.020 0.025 0.043 0.053 32 23 0.77 -0.8 11.5 13 3.2 4.1 2.5 1.9 1.7 3.5 30 35 50 42 60 54 25 17 40 40 45 55 75 65 90 85 40 30 80 80 1.2 -1.2 17 20 Min 0.6 -0.6 Typ Max 1.5 -1.5 100 100 1 -1 5 -5 IC IC Unit V nA A A VGS = 4.5 V, ID = 11.8A Drain Source On State Resistance* rDS(on) VGS = -4.5 V, ID = -8.9A VGS = 2.5 V, ID = 9.8A VGS = -2.5 V, ID = -6.9A Forward Transconductance* Diode Forward Voltage* Total Gate Charge Gate Source Charge Gate Drain Charge Gate Resistance Turn On Time Rise Time gfs VSD Qg Qgs Qgd RG td(on) tr VDS = 5 V, ID = 11.8A VDS = -5 V, ID = -8.9A IS = 2.9A, VGS = 0 V IS = -2.9A, VGS = 0 V N-Channel VDS = 6 V, VGS = 4.5V, ID = 11.8A S V nC Turn Off Delay Time td( off) ns 300 s, duty cycle 2%. 2 www.kexin.com.cn