KI9410DY

S MD Type N-Channel 30-V (D-S) MOSFET KI9410DY MOSFET SOP-8 ■ Features ● VDS (V) = 30V ● ID = 7 A (VGS = 10V) ● RDS(ON) ＜0.03 Ω (VGS = 10V) ● RDS(ON) ＜0.04 Ω (VGS = 5V) ● RDS(ON) ＜0.05 Ω (VGS = 4.5V) DDDD G N/C S S S S G N-Channel MOSFET Top View 1 2 3 4 8 7 6 5 D D D D ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 ℃)* Pulsed Drain Current Continuous Source Current(Diode Conduction) * Maximum Power Dissipation * TA = 25℃ TA = 70℃ Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient* * Surface Mounted on 1” x 1” FR4 Board. t ≤ 10 sec TA = 25℃ TA = 70℃ Symbol VDS VGS ID IDM IS PD TJ, Tstg RthJA Limit 30 ±20 7.0 5.8 30 2.8 2.5 1.6 -55 to 150 50 Unit V A A A W ℃ ℃/W www.kexin.com.cn 1 SMD Type KI9410DY ■ Electrical Characteristics Ta = 25℃ Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Symbol VGS(th) IGSS IDSS Testconditons VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ±20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55℃ On-State Drain Currentb * ID(on) VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 7 A Drain-Source On-State Resistance * rDS(on) VGS = 5 V, ID = 4 A VGS = 4.5 V, ID = 3.5 A Forward Transconductanceb * Diode Forward Voltageb * Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time gfs VSD Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2 A, di/dt = 100 A/μs VDD = 25 V, RL = 25 Ω ID = 1 A, VGEN = 10 V, RG = 6 Ω VDS = 15 V, VGS = 10 V, ID = 7 A VDS = 15 V, ID = 7 A IS = 2 A, VGS = 0 V 30 Min 1.0 Typ MOSFET Max Unit V ±100 2 25 nA μA A 0.024 0.030 0.032 15 0.72 24 2.8 4.6 14 10 46 17 60 0.030 0.040 0.050 Ω Ω Ω S 1.1 50 V nC 30 60 150 140 ns * Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%. www.kexin.com.cn 2