KL13

S MD Type Schottky Barrier Rectifier Diodes KL12 THRU KL14 Diodes Features For Surface Mounted Applications Metal Silicon Junction, Majority Carrier Conduction Low Power Loss, High Efficiency High Forward Surge Current Capability 1.575 1.397 2 DO-214AC(SMA) 4.597 3.988 Unit: mm 3.93 3.73 1 2.896 2.489 1.67 1.47 5.283 4.775 2.38 2.18 5.49 5.29 Recommended Land Pattern 2.438 1.981 1.524 0.762 0.203 0.051 0.305 0.152 Maximum Ratings and Electrical Characteristics @ Ta = 25 Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum InstantaneousForward Voltage at 1.0A Maximum DC Reverse Current TA=25 At Rated DC Blocking Voltage Typical Thermal Resistance * TA=100 R R Operating Runction Temperature Range Storage Temperature Range * P.C.B mounted with 0.2X0.2"(5.0x5.0mm)copper pad areas JA JL Symbol VRRM VRMS VDC I(AV) IFSM VF IR KL12 20 14 20 KL13 30 21 30 1.0 30 KL14 40 28 40 Unit V A A 0.40 V mA 0.38 0.38 0.5 20 88.0 /W 28 -55 to +125 -55 to +150 TJ TSTG www.kexin.com.cn 1