KMBT2222A

S MD Type NPN Switching Transistor KMBT2222A SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm ■ Features 2.4-+00..11 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 ● Low voltage (max.40 V). 1.3-+00..11 ● High current (max. 600 mA) 0.4 3 +0.05 0.1-0.01 0.97-+00..11 1.Base 0.38-+00..11 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Ta≤ 25 ℃ Thermal resistance from junction to ambient Operating and Storage and Temperature Range Symbol VCBO VCEO VEBO IC Ptot RèJA Tj, TSTG Rating 75 40 6 600 300 417 -65 to +150 Unit V V V mA mW K/W ℃ 0-0.1 www.kexin.com.cn 1 S MD Type KMBT2222A ■ Electrical Characteristics Ta = 25℃ Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector cutoff current Emitter cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Testconditons IC = 10μA, IE = 0 IC = 10 mA, IB = 0 IC = 10 μA, I C = 0 IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 125 ℃ IC = 0; VEB = 3 V IC = 0.1 mA; VCE = 10 V IC = 1 mA; VCE = 10 V IC = 10 mA; VCE = 10 V DC current gain hFE IC = 10 mA; VCE = 10 V; Ta = -55 ℃ IC= 150 mA; VCE = 10 V IC = 150 mA; VCE = 1 V IC = 500 mA; VCE = 10 V collector-emitter saturation voltage VCEsat IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA base-emitter saturation voltage Delay time Rise time Storage time Fall time Output Capacitance Input Capacitance Noise Figure Transition frequency VBEsat td tr ts tf Cobo Cibo NF fT IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA IB1 = 15 mA, IC = 150 mA, VCC = 30V, VBE = -0.5 V IB1 = IB2 = 15 mA, IC = 150 mA, VCC = 30V VCB = 10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10 V, IC = 100 μA,RS = 1 kΩ, f = 1 kHz IC = 20 mA; VCE = 20 V; f = 100 MHz 300 0.6 35 50 75 35 100 50 40 Min 75 40 6 Transistors Typ Max Unit V V V 10 10 10 nA μA nA 300 300 1 1.2 2 15 25 200 60 8 25 4 mV V V V ns ns ns ns pF pF dB MHz ■ Marking Marking 1P 2 www.kexin.com.cn S MD Type KMBT2222A Transistors 1000 350 PD, POWER DISSIPATION (mW) 250 200 150 100 50 hFE, DC CURRENT GAIN 300 TA = 125°C 100 TA = -25°C TA = +25°C 10 VCE = 1.0V 0 0 25 50 75 100 125 150 175 200 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Typical DC Current Gain vs Collector Current TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 30 VCE COLLECTOR-EMITTER VOLTAGE (V) 2. 0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IC = 300mA IC = 30mA IC = 1mA IC = 10mA IC = 100mA 20 10 Cibo CAPACITANCE (pF) 5.0 Cobo 1.0 0.1 1.0 10 50 REVERSE VOLTS (V) Fig. 3 Typical Capacitance IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region www.kexin.com.cn 3