KMBT3906

S MD Type PNP Transistors KMBT3906(MMBT3906) SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 Epitaxial planar die construction +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector- Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current- Continuous Collector Dissipation Junction and Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, Tstg Rating -40 -40 -5 -0.2 0.3 -55 to 150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector - base breakdown voltage Collector - emitter breakdown voltage Emitter- base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector- emitter saturation voltage Base - emitter saturation voltage Delay time Rise time Storage time Fall time Transition frequency Symbol VCBO VCEO VEBO IcBO IcEO IEBO hFE Ic= -100 ìA Ic= -1 mA IE= -100 ìA Testconditons IE=0 IB=0 IC=0 Min -40 -40 -5 -0.1 -50 -0.1 100 60 -0.3 -0.95 35 35 225 75 250 MHz ns V V ns 300 Typ Max Unit V V V A nA A VCB= -40 V , IE=0 VCE= -40 V , VBE(off)=-3V VEB= -5V , IC=0 VCE= -1V, IC= -10mA VCE= -1V, IC= -50mA VCE(sat) IC=-50 mA, IB= -5mA VBE(sat) IC=-50 mA, IB= -5mA td tr ts tf fT VCC=-3.0V,VBE=0.5V IC=-10mA,IB1=-1.0mA VCC=-3.0V,IC=-10mA IB1=IB2=-1.0mA VCE= -20V, IC= -10mA, f=100MHz Marking Marking 2A +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 S MD Type KMBT3906(MMBT3906) Typical Characteristics Transistors Fig.1 Max Power Dissipation vs Ambient Temperature Fig.2 Input and Output Capacitance vs. Collector-Base Voltage Fig.3 Typical DC Current Gain vs Collector Current Fig.4 Typical Collector-Emitter Saturation Voltage vs. Collector Current Fig.5 Typical Base-Emitter Saturation Voltage vs. Collector Current www.kexin.com.cn 3