KMUN2231T1

SMD Type NPN Silicon Bias Resistor Transistor KMUN2231T1 Transistors ■ Features ● Simplifies Circuit Design ● Reduces Board Space +0.1 2.4-0.1 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm ● Reduces Component Count +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 PIN 1 BASE (INPUT) R1 R2 +0.1 0.97-0.1 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) 1.Base +0.1 0.38-0.1 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector-base voltage Collector-Emitter Voltage Collector Current -Continuous Collector Power dissipation Thermal Resistance Junction-to-Ambient Junction temperature Storage temperature Symbol VCBO VCEO IC PC RθJA Tj Tstg Rating 50 50 0.1 0.23 540 150 -55 to +150 Unit V V A W ℃/ W ℃ ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Output Voltage (on) Output Voltage (off) Input Resistor Resistor Ratio Symbol V(BR)CBO V(BR)CEO ICBO ICEO IEBO hFE VCE(sat) VOL VOH R1 R1/R2 Testconditons Ic= 10 μA，IE=0 Ic= 2mA， IB=0 VCB= 50 V , IE=0 VCE= 50 V , IB=0 VEB= 6V , IC=0 VCE=10V, IC= 5.0mA IC = 10 mA, IB = 5 m A VCC = 5.0 V, VB = 2.5 V, RL = 1.0kΩ VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ 4.9 1.5 0.8 2.2 1.0 2.9 1.2 V kΩ 8 15 0.25 V Min 50 50 0.1 0.5 2.3 Typ Max Unit V V μA μA mA 0-0.1 www.kexin.com.cn 1