KO3404

SMD S MD Type Transistors IC N-Channel Enhancement Mode Field Effect Transistor KO3404 SOT-23 Unit: mm Features 3 +0.1 2.9-0.1 +0.1 0.4-0.1 VDS (V) = 30V +0.1 2.4-0.1 ID =5.8 A (VGS=10V) RDS(ON) RDS(ON) 28 m 43 m (VGS = 10V) (VGS = 4.5V) +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current *1 TA=25 TA=70 IDM PD TJ, TSTG 2 Symbol VDS VGS ID Rating 30 20 5.8 4.9 20 1.4 1 -55 to 150 Unit V V A Pulsed Drain Current *2 Power Dissipation *1 TA=25 TA=70 Junction and Storage Temperature Range W *1The value of R èJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25 *2 Repetitive rating, pulse width limited by junction temperature. Thermal Characteristics Parameter Maximum Junction-to-Ambient*1 Maximum Junction-to-Ambient *1 Maximum Junction-to-Lead *2 t 10s Symbol RèJA RèJL 2 Typ 65 85 43 Max 90 125 60 Unit /W /W /W Steady-State Steady-State *1The value of R èJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25 *2 . The R èJA is the sum of the thermal impedence from junction to lead R èJL and lead to ambient. www.kexin.com.cn 1 SMD Type KO3404 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Symbol BVDSS IDSS IGSS VGS(th) ID(ON) Testconditons ID=250 A, VGS=0V VDS=24V, VGS=0V VDS=24V, VGS=0V ,TJ=55 VDS=0V, VGS= 20V VDS=VGS ID=250 A VGS=4.5V, VDS=5V VGS=10V, ID=5.8A Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=5.8A VGS=4.5V, ID=5.0A Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current Reverse Transfer Capacitance Gate resistance Input Capacitance Output Capacitance Total Gate Charge (10V) Total Gate Charge (4.5V) Gate Source Charge Gate Drain Charge Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Turn-On DelayTime Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge gFS VSD IS Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr IF=5.8A, dI/dt=100A/ IF=5.8A, dI/dt=100A/ s s VGS=10V, VDS=15V, RL=2.7 ,RGEN=3 VGS=10V, VDS=15V, ID=5.8A VGS=0V, VDS=0V, f=1MHz VGS=0V, VDS=15V, f=1MHz VDS=5V, ID=5.8A IS=1A TJ=125 1 Transistors IC Min 30 Typ Max Unit V 1 5 100 1.9 3 A nA V A 22.5 31.3 34.5 10 14.5 0.76 1 2.5 680 102 77 3 13.88 6.78 1.8 3.12 4.6 3.8 20.9 5 16.1 7.4 6.5 5.7 30 7.5 21 10 3.6 17 8.1 nC nC nC nC ns ns ns ns ns nC 820 28 38 43 m m S V A pF pF pF 20 Marking Marking A4 2 www.kexin.com.cn