KO3407

SMD S MD Type Transistors IC P-Channel Enhancement Mode Field Effect Transistor KO3407 SOT-23 Unit: mm VDS (V) = -30V +0.1 2.4-0.1 ID = -4.1 A RDS(ON) RDS(ON) 52m 87m (VGS = -10V) (VGS = -4.5V) +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Gate-Source Voltage Drain-Source Voltage Continuous Drain Current *1 TA=25 TA=70 IDM PD TJ, TSTG 2 Symbol VDS VGS ID Rating -30 20 -4.1 -3.5 -20 1.4 1 -55 to 150 Unit V V A Pulsed Drain Current *2 Power Dissipation *1 TA=25 TA=70 Junction and Storage Temperature Range W *1The value of R èJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25 *2 Repetitive rating, pulse width limited by junction temperature. Thermal Characteristics Parameter Maximum Junction-to-Ambient*1 Maximum Junction-to-Ambient *1 Maximum Junction-to-Lead *2 t 10s Symbol RèJA RèJL 2 Typ 65 85 43 Max 90 125 60 Unit /W /W /W Steady-State Steady-State *1The value of R èJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25 *2 . The R èJA is the sum of the thermal impedence from junction to lead R èJL and lead to ambient. www.kexin.com.cn 1 SMD Type KO3407 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Symbol BVDSS IDSS IGSS VGS(th) ID(ON) Testconditons ID=250ìA, VGS=0V VDS=-24V, VGS=0V VDS=-24V, VGS=0V ,TJ=55 VDS=0V, VGS= 20V VDS=VGS ID=-250ìA VGS=-4.5V, VDS=-5V VGS=-10V, ID=4.1A Static Drain-Source On-Resistance RDS(ON) VGS=-10V, ID=4.2A VGS=-4.5V, ID=-3A Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current Reverse Transfer Capacitance Gate resistance Input Capacitance Output Capacitance Total Gate Charge(10V) Total Gate Charge (4.5V) Gate Source Charge Gate Drain Charge Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Turn-On DelayTime Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge gFS VSD IS Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr IF=-4A, dI/dt=100A/µs IF=-4A, dI/dt=100A/µs VGS=-10V, VDS=-15V, RL=3.6Ù,RGEN=3Ù VGS=-4.5V, VDS=-15V, ID=-4A VGS=0V, VDS=0V, f=1MHz VGS=0V, VDS=-15V, f=1MHz VDS=-5V, ID=-4A IS=-1A,VGS=0V 5.5 TJ=125 -1 -10 Min -30 Transistors IC Typ Max Unit V -1 -5 100 -1.8 -3 ìA nA V A 40.5 57 64 8.2 -0.77 52 73 87 mÙ mÙ S -1 -2.2 V A pF pF pF Ù nC nC nC nC ns ns ns ns ns nC 700 120 75 10 14.3 7 3.1 3 8.6 5 28.2 13.5 27 15 Marking Marking A7 2 www.kexin.com.cn