KO6401-HF

MOSFET SMD Type P-Channel MOSFET AO6401-HF (KO6401-HF) ( SOT-23-6 ) Unit: mm +0.1 ● VDS (V) =-30V 6 5 4 1 2 3 +0.2 1.6 -0.1 ● ID =-5 A (VGS =-10V) ● RDS(ON) ＜ 64mΩ (VGS =-4.5V) ● RDS(ON) ＜ 85mΩ (VGS =-2.5V) 0.55 ● RDS(ON) ＜ 47mΩ (VGS =-10V) +0.2 2.8 -0.1 ■ Features 0.4 0.4 -0.1 +0.02 0.15 -0.02 +0.01 -0.01 ● Pb−Free Package May be Available. The G−Suffix Denotes a +0.2 -0.1 +0.1 1.1 -0.1 Pb−Free Lead Finish 0-0.1 +0.1 0.68 -0.1 D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead ID IDM TA=25°C TA=70°C t ≤ 10s Steady-State PD RthJA Unit V -5 -4 A -28 2 1.3 W 62.5 110 RthJL 50 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET AO6401-HF (KO6401-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage Static Drain-Source On-Resistance On state drain current VGS(th) RDS(On) ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) Test Conditions ID=-250μA, VGS=0V Min -1 VDS=-30V, VGS=0V, TJ=55℃ -5 VDS=0V, VGS=±12V VDS=VGS , ID=-250μA -0.5 74 64 VGS=-2.5V, ID=-1A 85 -28 645 VGS=0V, VDS=-15V, f=1MHz 4 VGS=-10V, VDS=-15V, ID=-5A 17 8.5 1.5 6.5 VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD IF=-5A, dI/dt=100A/μs IS=-1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using