KO6604

MOSFET SMD Type Complementary Trench MOSFET AO6604 (KO6604) ( SOT-23-6 ) ■ Features Unit: mm +0.1 0.4 -0.1 6 5 4 1 2 3 RDS(ON) ＜ 100mΩ (VGS = 1.8V) ● P-Channel：VDS=-20V ID=-2.5A RDS(ON) ＜ 75mΩ (VGS =-4.5V) 0.55 +0.2 1.6 -0.1 RDS(ON) ＜ 75mΩ (VGS = 2.5V) +0.2 2.8 -0.1 RDS(ON) ＜ 65mΩ (VGS = 4.5V) 0.4 ● N-Channel：VDS=20V ID=3.4A +0.02 0.15 -0.02 +0.01 -0.01 RDS(ON) ＜ 95mΩ (VGS =-2.5V) +0.2 -0.1 +0.1 1.1 -0.1 RDS(ON) ＜ 115mΩ (VGS =-1.8V) D2 D1 0-0.1 G1 +0.1 0.68 -0.1 1.Gate1 4.Drain2 2.Source2 5.Source1 3.Gate2 6.Drain1 G2 S2 S1 n-channel -channel p-channel ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation IDM Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient t ≤ 10s Steady-State Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range ID Steady-State PD RthJA RthJL N-Channel P-Channel 20 -20 ±8 3.4 -2.5 2.5 -2 13 Unit V A -13 1.1 0.7 W 110 150 ℃/W 80 TJ 150 Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type Complementary Trench MOSFET AO6604 (KO6604) ■ N-Channel Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Gate Threshold Voltage VGS(th) Test Conditions Min On State Drain Current ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (4.5V) Qg VDS=20V, VGS=0V 1 VDS=20V, VGS=0V, TJ=55℃ 5 nA 0.7 1 V 51 65 68 85 VGS=2.5V, ID=3A 58 75 VGS=1.8V, ID=2A 68 100 0.4 VDS=VGS , ID=250μA VGS=4.5V, ID=3.4A TJ=125℃ VGS=4.5V, VDS=5V 13 VDS=5V, ID=3.4A 16 260 320 VGS=0V, VDS=10V, f=1MHz 33 48 63 16 27 38 VGS=0V, VDS=0V, f=1MHz 1.5 3 4.5 2.9 3.8 0.6 Turn-On DelayTime td(on) 2.5 tr trr Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current IS www.kexin.com.cn VSD Ω 3.2 ns 21 3 tf Body Diode Reverse Recovery Time Diode Forward Voltage VGS=5V, VDS=10V, RL=2.95Ω,RG=3Ω pF nC 0.4 Qgs td(off) S 205 VGS=4.5V, VDS=10V, ID=3.4A mΩ A Qgd Turn-Off DelayTime μA ±100 VDS=0V, VGS=±8V Gate Drain Charge Turn-On Rise Time Unit V Gate Source Charge Turn-Off Fall Time 2 RDS(On) Max 20 ID=250μA, VGS=0V VGS=4.5V, ID=3.4A Static Drain-Source On-Resistance Typ IF= 3.4A, dI/dt= 100A/μs IS=1A,VGS=0V 14 19 3.8 0.7 nC 1.5 A 1 V MOSFET SMD Type Complementary Trench MOSFET AO6604 (KO6604) ■ P-Channel Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage VGS(th) Test Conditions Min On state drain current RDS(On) ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge (4.5V) Qg VDS=-20V, VGS=0V -1 VDS=-20V, VGS=0V, TJ=55℃ -5 VDS=0V, VGS=±8V -0.4 -0.65 VDS=VGS ID=-250μA VGS=-2.5V, ID=-2A 70 95 VGS=-1.8V, ID=-1A 85 115 VGS=-4.5V, VDS=-5V VDS=-5V, ID=-2.5A -13 560 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-2.5A 23 8.5 11 Maximum Body-Diode Continuous Current IS VSD 36 ns 53 56 tf trr Diode Forward Voltage VGS=-4.5V, VDS=-10V, RL=4Ω,RGEN=6Ω Ω nC 1.2 7.2 Qrr pF 15 td(on) Body Diode Reverse Recovery Charge 745 70 Turn-On DelayTime Body Diode Reverse Recovery Time S 80 2.1 Turn-Off Fall Time mΩ A 13 Qgd tr V 105 Gate Drain Charge td(off) -1 80 Qgs Turn-On Rise Time nA 75 TJ=125℃ μA ±100 56 VGS=-4.5V, ID=-2.5A Unit V Gate Source Charge Turn-Off DelayTime Max -20 ID=-250μA, VGS=0V VGS=-4.5V, ID=-2.5A Static Drain-Source On-Resistance Typ IF=-2.5A, dI/dt=100A/μs IS=-1A,VGS=0V 37 49 27 -0.7 nC -1.5 A -1 V www.kexin.com.cn 3 MOSFET SMD Type Complementary Trench MOSFET AO6604 (KO6604) ■ N-Channel Typical Characterisitics 16 16 4.5V 2.5V 12 8 ID(A) ID (A) 12 VGS=1.5V 4 8 1 2 3 4 0 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.6 100 VGS=1.8V 80 VGS=2.5V 60 Normalized On-Resistance 120 RDS(ON) (mΩ Ω) 25°C 0 0 VGS=4.5V 40 0 3 1.4 VGS=1.8V ID=2A 1.2 5 VGS=4.5V 2 ID=3.4A 1 -50 . 120 VGS=2.5V ID=3A 0.8 6 9 12 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 ID=3.4A 1.0E+01 100 1.0E+00 80 125°C IS (A) RDS(ON) (mΩ Ω) 125°C 4 0 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 60 25°C 1.0E-04 40 0 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 4 VDS=5V 2V www.kexin.com.cn 2 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (NoteE) MOSFET SMD Type Complementary Trench MOSFET AO6604 (KO6604) ■ N-Channel Typical Characterisitics 5 300 Capacitance (pF) 4 VGS (Volts) 400 VDS=10V ID=3.4A 3 2 200 Crss 0 0 0 1 2 3 Qg (nC) Figure 7: Gate-Charge Characteristics 0 4 100.0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 1000 10µs RDS(ON) limited 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 20 TA=25°C 100 100µs Power (W) 10.0 ID (Amps) Coss 100 1 10 10s DC 1 0.0 0.01 0.1 1 VDS (Volts) 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 Zθ JA Normalized Transient Thermal Resistance Ciss 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 100 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=150°C/W 0.1 0.01 Single Pulse PD Ton 0.001 0.00001 0.0001 T 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 100 1000 www.kexin.com.cn 5 MOSFET SMD Type Complementary Trench MOSFET AO6604 (KO6604) ■ P-Channel Typical Characterisitics 25 20 -4V 20 -3.5V 15 -2.5V -ID(A) -ID (A) 15 10 10 5 VGS=-1.5V 0 0 1 2 3 4 0 0.5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 150 VGS=-1.8V 110 VGS=-2.5V 90 70 VGS=-4.5V Normalized On-Resistance 1.6 130 RDS(ON) (mΩ Ω) 25°C 0 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 50 VGS=-2.5V ID=-2A 1.4 VGS=-4.5V 5 ID=-2.5A 1.2 VGS=-1.8V ID=-1A 1 0.8 0 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 2 4 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 180 ID=-2.5A 160 1.0E+01 140 1.0E+00 120 1.0E-01 100 125°C 80 -IS (A) RDS(ON) (mΩ Ω) 125°C -2V 5 125°C 1.0E-02 25°C 1.0E-03 25°C 60 1.0E-04 40 0 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 6 VDS=-5V -3V -4.5V www.kexin.com.cn 2 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) MOSFET SMD Type Complementary Trench MOSFET AO6604 (KO6604) ■ P-Channel Typical Characterisitics 1400 5 VDS=-10V ID=-2.5A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1000 800 Ciss 600 400 1 Coss 200 Crss 0 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 0 10 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 20 1000 100.0 TA=25°C 10µs RDS(ON) limited 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 100 Power (W) -ID (Amps) 10.0 10 10s DC 0.0 1 0.00001 -VDS (Volts) Zθ JA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=150°C/W 0.1 PD Single Pulse 0.01 Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.kexin.com.cn 7