KPA1716

SMD S MD Type MOS Field Effect Transistor KPA1716 IC IC Features Low on-state resistance RDS(on)1 = 12.5 m RDS(on)2 = 17 m RDS(on)3 = 19 m TYP. (VGS = -10 V, ID = -4 A) TYP. (VGS = -4.5 V, ID = -4 A) TYP. (VGS = -4.01 V, ID = -4 A) Low Ciss : Ciss = 2100 pF TYP. Built-in G-S protection diode Small and surface mount package Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Ta = 25 Drain Current (Pulse) *1 Total Power DissipationTa = 25 Channel Temperature Storage Temperature *1 PW 10 s, Duty cycle 1% *2 Symbol VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Rating -30 20 8 32 2.0 150 -55 to + 150 Unit V V A A W *2 Mounted on ceramic substrate of 1200mm2 X1.0 mm www.kexin.com.cn 1 SMD Type KPA1716 Electrical Characteristics Ta = 25 Parameter Symbol RDS(on)1 Drain to Source On-state Resistance RDS(on)2 RDS(on)3 Gate Cut-off Voltage Forward Transfer Admittance Zero Gate Voltage Drain Current Gate Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr IF = 8.0 A, VGS = 0 IF = 8.0 A, VGS = 0 V di/dt = 100 A/ s ID = -8.0A, VDD = -24V, VGS = -10 V ID = -4.0 A, VGS(on) = -10 V, VDD =-15 V,RG = 10 VDS = -10 V, VGS = 0, f = 1 MHz Testconditons VDS = -10V, ID = -4.0 A VGS = -4.5V, ID = -4.0 A VGS = -4.0V, ID = -4.0 A VDS = -10 V, ID = 1 mA VDS = 10 V, ID = -4.0A VDS = -30 V, VGS = 0 VGS = 20V, VDS = 0 2100 700 300 30 150 120 76 40 6 10 0.8 45 33 -1.0 7 Min Typ 12.5 17 19 -1.6 14 -1 10 Max 16 23 26 -2.5 IC IC Unit m m m V S A A pF pF pF ns ns ns ns nC nC nC V ns nC 2 www.kexin.com.cn