KPA1750

SMD S MD Type MOS Field Effect Transistor KPA1750 Features Dual MOSFET chips in small package 4V Gate Drive Type and Low On-Resistance RDS(on)1 = 0.09 RDS(on)2 = 0.18 TYP. (VGS = -10 V, ID = -1.8 A) TYP. (VGS = -4 V, ID = -1.8A) IC IC Low Ciss : Ciss = 540 pF TYP. Built-in G-S protection diode Small and surface mount package 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Ta = 25 Drain Current (Pulse) *1 Total Power DissipationTa = 25 Total Power DissipationTa = 25 Channel Temperature Storage Temperature *1 PW 10 s, Duty cycle 1% *2 *2 Tch Tstg Symbol VDSS VGSS ID(DC) ID(pulse) PT Rating -20 20 3.5 14 1.7 2.0 150 -55 to + 150 Unit V V A A W W *2 Mounted on ceramic substrate of 1200mm2 X1.0 mm www.kexin.com.cn 1 SMD Type KPA1750 Electrical Characteristics Ta = 25 Parameter Drain to Source On-state Resistance Gate Cut-off Voltage Forward Transfer Admittance Zero Gate Voltage Drain Current Gate Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol RDS(on)1 RDS(on)2 VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr IF = 3.5 A, VGS = 0 IF = 3.5 A, VGS = 0 V di/dt = 100 A/ s ID = -3.5A, VDD = -16V, VGS = -10 V ID = -1.8 A, VGS(on) = -10 V, VDD =-10 V,RG = 10 VDS = -10 V, VGS = 0, f = 1 MHz Testconditons VDS = -10V, ID = -1.8 A VGS = -4V, ID = -1.8 A VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -1.8A VDS = -20 V, VGS = 0 VGS = 20V, VDS = 0 540 385 105 10 110 340 230 18 2.0 5.1 0.8 160 310 -1.0 2.0 Min Typ Max Unit m m V S -10 10 A A pF pF pF ns ns ns ns nC nC nC V ns nC 0.065 0.090 0.125 0.180 -1.7 4.4 -2.5 IC IC 2 www.kexin.com.cn