KPA1871

SMD S MD Type MOS Field Effect Transistor KPA1871 IC IC Features Can be driven by a 2.5-V power source Low on-state resistance RDS(on)1 = 26 m RDS(on)2 = 27 m RDS(on)3 = 38 m TYP. (VGS = 4.5 V, ID = 3.0 A) TYP. (VGS = 4.0 V, ID = 3.0 A) TYP. (VGS = 2.5 V, ID = 3.0 A) TSSOP-8 Unit: mm Built-in G-S protection diode against ESD 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (Pulse) *1 Total Power Dissipation *2 Channel Temperature Storage Temperature *1 PW 10 s, Duty cycle 1% Symbol VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Rating 30 12 6 80 2.0 150 -55 to + 150 Unit V V A A W *2 Mounted on ceramic substrate of 50 cm2 X1.1 mm www.kexin.com.cn 1 SMD Type KPA1871 Electrical Characteristics Ta = 25 Parameter Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Symbol IDSS IGSS VGS(off) | yfs | RDS(on)1 Drain to Source On-state Resistance RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr IF = 6.0 A, VGS = 0 IF = 6.0 A, VGS = 0 V di/dt = 50 A/ s ID = 6.0A, VDD = 24V, VGS = 4.0 V ID = 3.0 A, VGS(on) = 4.0 V, VDD =10 V,RG = 10 VDS = 10 V, VGS = 0, f = 1 MHz Testconditons VDS = 30 V, VGS = 0 VGS = 12 V, VDS = 0 0.5 5 15.0 16.0 21.0 20.5 21.5 27.8 930 220 105 55 180 260 230 9 2 4 0.80 180 120 26.0 27.0 38.0 1.0 Min Typ Max 10 10 1.5 Unit A A V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC IC IC VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.0A VDS = 4.5V, ID = 3.0 A VGS = 4.0V, ID = 3.0 A VGS = 2.5 V, ID = 3.0 A 2 www.kexin.com.cn