KPA2790GR

SMD S MD Type MOS Field Effect Transistor KPA2790GR Features Low on-state resistance N-channel RDS(on)1 = 28 m RDS(on)2 = 40 m P-channel RDS(on)1 = 60 m RDS(on)2 = 80 m Low input capacitance N-channel Ciss = 500 pF TYP. P-channel Ciss = 460 pF TYP. Built-in gate protection diode Small and surface mount package MAX. (VGS = 10 V, ID = 3 A) MAX. (VGS = 4.5 V, ID = 3 A) MAX. (VGS = -10 V, ID = -3 A) MAX. (VGS = -4.5 V, ID = -3 A) IC IC Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) *1 Total Power Dissipation (1 unit) *2 Total Power Dissipation (2 units) *2 Channel Temperature Storage Temperature Single Avalanche Current *3 Single Avalanche Energy *3 *1 PW 10 s, Duty Cycle 1% Symbol VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg IAS EAS 6 3.6 N-Channel 30 20 6 24 1.7 2 150 -55 to +150 -6 3.6 A mJ P- Channel -30 20 6 24 Unit V V A A W W *2 Mounted on ceramic substrate of 2000 mm2 x 1.6 mm *3 Starting Tch = 25 , VDD =1/2 X VDSS, RG = 25 , L = 100 H, VGS = VGSS 0V www.kexin.com.cn 1 SMD Type KPA2790GR Electrical Characteristics Ta = 25 Parameter Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Symbol IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Drain to Source On-state Resistance RDS(on)3 RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Note Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr IF = 6 A, VGS = 0 V,di/dt = 100 A/ Qrr s Testconditons VDS = 30 V, VGS = 0 V VDS = -30 V, VGS = 0 V VGS = VGS = 16 V, VDS = 0 V 16 V, VDS = 0 V N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch 1.5 -1.0 2 2 21 28 34 43 P- Ch N-Ch P- Ch N-Ch P- Channel VDS = -10 V,VGS = 0 V,f = 1 MHz N-Channel VDD = 15 V, ID = 3 A,VGS = 10 V RG = 10 P- Channel VDD = -15 V, ID = -3 A,VGS = -10 V RG = 10 N-Channel ID = 6 A,VDD = 24 V,VGS = 10 V P- Channel ID = -6 A,VDD = -24 V,VGS = -10 V IF = 6 A, VGS = 0 V IF = 6 A, VGS = 0 V P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch N-Ch P- Ch 58 65 500 460 135 130 77 77 9.2 8.5 8.8 4.8 28 42 7.4 19 12.6 11 1.7 1.7 3.8 3.3 0.85 0.92 18 21 11 12 28 40 53 60 80 110 Min Typ Max 10 -10 10 10 2.5 -2.5 IC IC Unit A A V S m m m m m m pF pF pF ns ns ns ns nC nC nC V ns nC VDS = 10 V, ID = 1 mA VDS = -10 V, ID = -1 mA VDS = 10 V, ID = 3 A VDS = -10 V, ID = -3 A VGS = 10 V, ID = 3 A VGS = 4.5 V, ID = 3 A VGS = 4.0 V, ID = 3 A VGS = -10 V, ID = -3 A VGS = -4.5 V, ID = -3 A VGS = -4.0 V, ID = -3 A N-Channel VDS = 10 V,VGS = 0 V,f = 1 MHz 2 www.kexin.com.cn