SMD S MD Type
Silicon P, N Channel MOS Type Transistor KPCF8402
Features
Low drain-source ON resistance : P Channel RDS (ON) = 60 m N Channel RDS (ON) = 38 m (typ.) (typ.)
IC IC
High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.) N Channel |Yfs| = 6.8 S (typ.) Low leakage current : P Channel IDSS = -10 N Channel IDSS = 10 Enhancement-mode : P Channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) A (VDS = -30 V) A (VDS = 30 V)
Absolute Maximum Ratings Ta = 25
Parameter Drain-source voltage Drain-gate voltage (RGS = 20 k Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) ) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) P-Channel -30 -30 20 -3.2 -12.8 1.35 1.12 0.53 0.33 0.67 -1.6 0.11 150 -55 to 150 92.6 111.6 /W 235.8 378.8 N-Channel 30 30 20 4 16 1.35 1.12 W 0.53 0.33 2.6 2 mJ A mJ Unit V V V A A
Single-device operation Drain power dissipation (t = (Note 3a) 5 s) Single-device value at dual operation(Note 3b) Single-device operation Drain power dissipation (t = (Note 3a) 5 s) (Note 2b) Single-device value at dual operation(Note 3b) Single pulse avalanche energy(Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Single-device operation Thermal resistance,channel (Note 3a) to ambient (t = 5 s) (Note Single-device value at 2a) dual operation (Note 3b) Single-device operation Thermal resistance,channel (Note 3a) to ambient (t = 5 s) (Note Single-device value at 2b) dual operation (Note 3b)
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SMD Type
KPCF8402
Electrical Characteristics Ta = 25
Parameter Gate leakage current Symbol IGSS VGS = VGS = Drain cut-off current IDSS V (BR) DSS V (BR) DSX Drain-source breakdown voltage V (BR) DSS V (BR) DSX Gate threshold voltage Vth Testconditons 16 V, VDS = 0 V 16 V, VDS = 0 V P-Ch N-Ch P-Ch N-Ch P-Ch -30 -15 N-Ch P-Ch N-Ch P-Ch 30 15 -0.8 1.3 80 60 N-Ch P-Ch N-Ch 2.9 3.4 58 38 5.9 6.8 600 VDS = -10 V, VGS = 0 V, f = 1 MHz P-Ch 60 70 470 VDS = 10 V, VGS = 0 V, f = 1 MHz N-Ch 60 80 5.3 12 P-Ch Switching time Fall time Switching time Turn-off time Switching time Rise time Switching time Turn-on time Switching time Fall time Switching time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (Gate-source charge "miller") charge tf toff tr ton tf toff Qg Qgs1 Qgd VDD=-24V,VGS=-10V,ID=-3.2A P-Ch N-Ch 8.4 34 5.2 8.3 4.0 22 14 1.4 2.7 -2.0 2.5 105 72 77 50 Min Typ Max 10 10 -10 10
IC IC
Unit A A A A V V V V V V m
VDS = ?30 V, VGS = 0 V VDS = 30 V, VGS = 0 V
Drain-source breakdown voltage
ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 20 V ID =10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = -10 V, ID = -1 mA VDS = 10 V, ID = 1 mA
Drain-source ON resistance
RDS (ON)
VGS = -4.5 V, ID = -1.6A VGS = -10 V, ID = -1.6 A
Drain-source ON resistance
RDS (ON)
VGS = 4.5 V, ID = 2.0A VGS = 10 V, ID = 2.0 A
m S S
Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Input capacitance Reverse transfer capacitance Output capacitance Switching time Rise time Switching time Turn-on time
|Yfs| Ciss Crss Coss Ciss Crss Coss tr ton
VDS = -10 V, ID = -1.6 A VDS = 10 V, ID = 2.0 A
pF
pF
ns
ns
nC
2
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SMD Type
KPCF8402
Electrical Characteristics Ta = 25
Parameter Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge Drain reverse current Pulse (Note 1) Symbol Qg Qgs1 Qgd IDRP IDR =-3.2 A, VGS = 0 V IDR =4.0 A, VGS = 0 V P-Ch VDD=24V,VGS=10V,ID=6A N-Ch Testconditons Min Typ 10 1.7 2.4 -12.8 16 Forward voltage (diode) VDSF N-Ch 1.2 -1.2 Max
IC IC
Unit
nC
A A V V
Circuit Configuration
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