KQB5N20

SMD S MD Type 200V N-Channel MOSFET KQB5N20 TO-263 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features 4.5A, 200 V. RDS(ON) = 1.2 @ VGS = 10 V Low gate charge (typical 6.0nC) + .2 8 .7 -00.2 Low Crss(typical 6.0pF) Fast switching 100% avalanche tested lmproved dv/dt capability +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + .2 5 .2 8 -00.2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Drain Current Continuous (TC=25 ) Drain Current Continuous (TC=100 ) Drain Current Pulsed *1 Gate-Source Voltage Single Pulsed Avalanche Energy*2 Avalanche Current *1 Repetitive Avalanche Energy *1 Peak Diode Recovery dv/dt *3 Power dissipation @ TA=25 Power dissipation @ TC=25 Derate above 25 Operating and Storage Temperature Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient *4 Thermal Resistance Junction to Ambient TJ, TSTG TL R R R JC JA JA Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD PD Rating 200 4.5 2.8 18 30 60 4.5 5.2 5.5 3.13 52 0.42 -55 to150 300 2.4 40 62.5 Unit V A A A V mJ A mJ V/ns W W W/ /W /W /W *1 Repetitive Rating:Pulse width limited by maximum junction temperature *2 l=4.5mH,IAS=4.5A,VDD=50V,RG=25 ,Startion TJ=25 *3 ISD 4.5A,di/dt 300A/ S,VDD BVDSS,Startiong TJ=25 *4 When mounted on the minimum pad size recommended (PCB Mount) 5 .6 0 1 gate 1 Gate 2 drain 2 Drain 3 source 3 Source www.kexin.com.cn 1 SMD Type KQB5N20 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current,Forward Gate-Body Leakage Current,Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain-Source Diode Forwrad Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Current * Pulse Test: Pulse Width 300 s, Duty Cycle IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr 2.0% VGS = 0 V, IS = 4.5 A * VGS = 0 V,dIF/dt = 100 A/ s,IS=4.5A VDS = 160 V, ID =4.5A,VGS = 10 V * VDD = 100 V, ID = 4.5A,RG=25 * VDS = 25 V, VGS = 0 V,f = 1.0 MHz Symbol BVDSS Testconditons VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25 VDS = 200 V, VGS = 0 V VDS = 160 V, TC=125 VGS = 30 V, VDS = 0 V VGS =-30 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 2.25A VDS = 40 V, ID = 2.25A * 3.0 Min 200 Transistors IC Typ Max Unit V 0.2 1 10 100 -100 5.0 0.96 3.0 210 40 6 7 55 9 25 6.0 1.5 2.2 4.5 18 1.5 95 0.3 270 50 8 25 120 30 60 7.5 1.2 mV/ A A nA nA V S pF pF pF ns ns ns ns nC nC nC A A V ns C 2 www.kexin.com.cn