KQD3P50

SMD S MD Type 500V P-Channel MOSFET KQD3P50 Transistors IC TO-252 +0.15 1.50-0.15 Features -1.2A, -500V, RDS(on) = 4.9 @VGS = -10 V Low gate charge ( typical 18 nC) +0.2 9.70-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 Fast switching 100% avalanche tested Improved dv/dt capability +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 Low Crss ( typical9.5 pF) 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Drain Current Continuous (TC=25 ) Drain Current Continuous (TC=100 ) Drain Current Pulsed *1 Gate-Source Voltage Single Pulsed Avalanche Energy*2 Avalanche Current *1 Repetitive Avalanche Energy *1 Peak Diode Recovery dv/dt *3 Power dissipation @ TA=25 Power dissipation @ TC=25 Derate above 25 Operating and Storage Temperature Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient *4 Thermal Resistance Junction to Ambient TJ, TSTG TL R R R JC JA JA Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD PD Rating -500 -2.1 -1.33 -8.4 30 250 -2.1 5 -4.5 2.5 50 0.4 -55 to150 300 2.5 50 110 Unit V A A A V mJ A mJ V/ns W W W/ /W /W /W *1 Repetitive Rating:Pulse width limited by maximum junction temperature *2 l=102mH,IAS=-2.1A,VDD=-50V,RG=25 ,Startion TJ=25 *3 ISD -2.7A,di/dt 200A/ S,VDD BVDSS,Startiong TJ=25 *4 When mounted on the minimum pad size recommended (PCB Mount) 3.80 www.kexin.com.cn 1 SMD Type KQD3P50 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current,Forward Gate-Body Leakage Current,Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain-Source Diode Forwrad Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Current * Pulse Test: Pulse Width 300 s, Duty Cycle IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr 2.0% VGS = 0 V, IS =-2.1 A VGS = 0 V,dIF/dt = 100 A/ s,IS=-2.7A* VDS = -400 V, ID = -2.7A,VGS = -10 V * VDD = -250 V, ID = -2.7A,RG=25 * VDS = -25 V, VGS = 0 V,f = 1.0 MHz Symbol BVDSS Testconditons VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25 VDS = -500 V, VGS = 0 V VDS = -400 V, TC=125 VGS = -30 V, VDS = 0 V VGS =30 V, VDS = 0 V VDS = VGS, ID = -250 A VGS = -10 V, ID = -1.05A VDS = -50 V, ID =-1.05A * Min Transistors IC Typ Max Unit V -500 0.42 -1 -10 -100 100 -3.0 3.9 2.1 510 70 9.5 12 56 35 45 18 3.6 9.2 -2.1 -8.4 -5.0 200 1.5 660 90 12 35 120 80 100 23 -5.0 4.9 mV/ A A nA nA V S pF pF pF ns ns ns ns nC nC nC A A V ns C 2 www.kexin.com.cn