KRF7104

SMD S MD Type HEXFET Power MOSFET KRF7104 IC IC Features Adavanced Process Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 10V @ Ta = 25 Continuous Drain Current, VGS @ 10V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt *3 Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 VGS dv/dt TJ, TSTG R JA Symbol ID ID IDM @TC= 25 PD Rating -2.3 -1.8 -10 2.0 0.016 12 -3 -55 to + 150 62.5 Unit A W W/ V V/nS /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Surface mounted on FR-4 board, t *3 ISD -2.3A, di/dt 100A/ s, VDD 10sec. V(BR)DSS,TJ 150 www.kexin.com.cn 1 SMD Type KRF7104 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Internal Drain Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300 s; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr td(off) tf LS LD Ciss Coss Crss IS ISM VSD trr Qrr TJ = 25 , IS = -1.5A, VGS = 0V*1 TJ = 25 , IF =-1.5A di/dt = -100A/ s*1 69 90 VGS = 0V VDS = -15V f = 1.0MHz Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = -250 A TJ ID = -1mA,Reference to 25 VGS = -10V, ID = -1.0A*1 VGS = -4.5V, ID = -0.50A*1 Min -20 Typ Max Unit V -0.015 0.19 0.30 -1.0 2.5 -2.0 -25 -100 100 9.3 1.6 3.0 12 16 42 30 4.0 40 40 90 50 25 0.25 0.40 -3.0 V/ RDS(on) VGS(th) gfs IDSS VDS = VGS, ID = -250 A VDS = -15V, ID = -2.3A*1 VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 55 V S A IGSS VGS = -12V VGS = 12V ID = -2.3A VDS = -10V VGS = -10V * VDD = -10V ID = -1.0A RG = 6 RD = 10 * nA nC ns nH 6.0 290 210 67 -2.0 A Body Diode) *2 -9.2 -1.2 100 140 V ns C pF *2 Repetitive rating; pulse width limited by max. junction temperature. 2 www.kexin.com.cn