KRF7319

SMD S MD Type HEXFET Power MOSFET KRF7319 IC IC Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current *5 Ta = 25 Continuous Drain Current *5 Ta = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Power Dissipation @Ta= 25 @Ta= 70 *4 *4 EAS IAR EAR dv/dt VGS TJ, TSTG R JA Symbol VDS ID ID IDM IS PD N-Channel 30 6.5 5.2 30 2.5 2.0 1.3 82 4.0 0.20 5.0 20 P-Channel -30 -4.9 -3.9 -30 -2.5 Unit V A W 140 -2.8 mJ A mJ -5 V/ ns V Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt *2 Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient *4 -55 to + 150 62.5 /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 4.0A, di/dt -2.8A, di/dt 74A/ s, VDD s, VDD V(BR)DSS, TJ V(BR)DSS, TJ 150 150 150A/ *3 N-Channel Starting TJ = 25 , L = 10mH RG = 25 , IAS = 4.0A. P-Channel Starting TJ = 25 , L = 35mH RG = 25 , IAS = -2.8A. *4 Surface mounted on FR-4 board, t 10sec. www.kexin.com.cn 1 SMD Type KRF7319 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = -250 A ID = 1mA,Reference to 25 ID = -1mA,Reference to 25 VGS = 10V, ID = 5.8A*1 VGS = 4.5V, ID = 4.7A*1 VGS = -10V, ID = -4.9A*1 VGS = -4.5V, ID = -3.6A*1 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A VDS =15V, ID = 5.8A*1 VDS = -15V, ID = -4.9A*1 VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 55 VDS = -24V, VGS = 0V, TJ = 55 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel ID = -4.9A,VDS = -15V,VGS = -10V N-Channel VDD = 15V,ID = 1.0A,RG = 6.0 RD = 15 P-Channel VDD = -28V,ID = -1.0A,RG = 6.0 RD = 15 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel VGS = 0V,VDS = 25V,f = 1.0MHz P-Channel VGS = 0V,VDS = -25V,f = 1.0MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min 30 -30 Typ Max Unit V 0.022 0.022 0.023 0.029 0.032 0.046 0.042 0.058 0.076 0.098 1.0 -1.0 14 7.7 1.0 -1.0 25 -25 100 100 22 23 2.6 3.8 6.4 5.9 8.1 13 8.9 13 26 34 17 32 650 710 320 380 130 180 33 34 3.9 5.7 9.6 8.9 12 19 13 20 39 51 26 48 TJ V/ Static Drain-to-Source On-Resistance RDS(on) Gate Threshold Voltage Forward Transconductance VGS(th) gfs V S Drain-to-Source Leakage Current IDSS A Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS = 20V nA N-Channel ID =5.8A,VDS = 15V,VGS =10V nC ns pF 2 www.kexin.com.cn SMD Type KRF7319 Electrical Characteristics Ta = 25 Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300 s; duty cycle 2%. Body Diode) Symbol IS ISM VSD trr Qrr TJ = 25 , IS = 1.7A, VGS = 0V*1 TJ = 25 , IS = -1.7A, VGS = 0V*1 N-Channel TJ = 25 , IF =1.7A,di/dt = 100A/ P-Channel TJ=25 ,IF=-1.7A,di/dt=-100A/ s*1 s*1 Testconditons N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.78 -0.78 45 44 58 42 Min Typ IC IC Max 2.5 -2.5 30 -30 1.0 -1.0 68 66 87 63 Unit A Body Diode) *2 V ns nC *2 Repetitive rating; pulse width limited by max. junction temperature. www.kexin.com.cn 3